Crossover of magnetoresistance from positive to negative in La0.5Sr0.5CoO3-σ/Si heterostructure

被引：3

作者：

Jin, K. X. ^{[1
]}

Li, H. ^{[1
]}

Wang, J. Y. ^{[1
]}

Tan, X. Y. ^{[1
]}

Zhao, S. G. ^{[1
]}

Chen, C. L. ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Dept Appl Phys, Xian 710072, Peoples R China

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 13期

基金：

中国国家自然科学基金;

关键词：

Heterostructure; Rectifying characteristics; Magnetoresistance; TRANSPORT-PROPERTIES; MAGNETIC-PROPERTIES; FILMS; TEMPERATURE; HETEROJUNCTION; RESISTIVITY; SILICON; FIELD;

D O I：

10.1016/j.tsf.2012.02.050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The magnetoresistance (MR) properties of a heterostructure fabricated by depositing a La0.5Sr0.5CoO3-sigma film on an n-type Si substrate have been studied. The heterostructure exhibits a good rectifying behavior. A negative MR at T=210 K and a positive MR at T=300 K are observed for all bias currents whereas; for temperatures ranging from 240 to 280 K the MR changes from being positive to negative with the increase of the bias current. The observed behavior of the MR effect is discussed in terms of current-induced ferromagnetic spin order. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：4493 / 4496

页数：4

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