Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A

被引：29

作者：

Wen, H ^{[1
]}

Wang, ZM ^{[1
]}

Salamo, GJ ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 10期

关键词：

D O I：

10.1063/1.1664018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Generally (In,Ga)As strained growth on GaAs surfaces results in zero-dimensional quantum dots. The formation of one-dimensional quantum wires is demonstrated during (In,Ga)As molecular-beam-epitaxial growth on GaAs(311)A at high temperature. The wires are running along the [-233] direction. Atomically resolved scanning tunneling microscopy images reveal that the wires are triangular-shaped in cross section and the two side bonding facets are {11,5,2}. These results are discussed in terms of a mechanism of strain-driven facet formation. (C) 2004 American Institute of Physics.

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页码：1756 / 1758

页数：3

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