Defect reduction processes in heteroepitaxial non-polar a-plane GaN films

被引：18

作者：

Hao, Rui ^{[1
]}

Kappers, M. J. ^{[1
]}

Moram, M. A. ^{[1
]}

Humphreys, C. J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 337卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

Basal stacking fault; Dislocation; TEM; MOVPE; Non-polar GaN; VAPOR-PHASE EPITAXY; MICROSTRUCTURAL CHARACTERIZATION; SAPPHIRE SUBSTRATE; GROWTH; DISLOCATIONS; DEPOSITION;

D O I：

10.1016/j.jcrysgro.2011.10.004

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic vapor-phase epitaxy has been investigated using a low-temperature nucleation layer (LT-NL) and using direct growth without a LT-NL The dislocation densities in a-plane GaN films can be reduced significantly from (6.2 +/- 0.3) x 10(10) cm(-2) to (2.1 +/- 0.3) x 10(9) cm(-2) using direct growth. The dislocation densities can also be reduced from (6.2 +/- 0.3) x 10(10) cm(-2) to (2.1 +/- 0.3) x 10(9) cm(-2) by introducing a SiN(x) interlayer into the film grown with a LT-NL However, introducing a similar SiN(x) interlayer into the film grown without a LT-NL produces no further dislocation reduction. Both the SiN(x) interlayers and the growth without a LT-NL reduce the dislocation density through the formation of islands, which promote dislocation bending and annihilation. (C) 2011 Published by Elsevier B.V.

引用

页码：81 / 86

页数：6

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