Beam-loss-induced electrical stress test on CMS Silicon Strip Modules

被引：7

作者：

Fahrer, M ^{[1
]}

Dirkes, G ^{[1
]}

Hartmann, F ^{[1
]}

Heier, S ^{[1
]}

Macpherson, A ^{[1
]}

Müller, T ^{[1
]}

Weiler, T ^{[1
]}

机构：

[1] Univ Karlsruhe, Inst Expt Kernphys, D-7500 Karlsruhe, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 518卷 / 1-2期

关键词：

beam loss; beam abort; silicon sensor; silicon strip sensor; silicon strip module; tracker; CMS; LHC;

D O I：

10.1016/j.nima.2003.11.011

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Based on simulated LHC beam loss scenarios, fully depleted CMS silicon tracker modules and sensors were exposed to 42 ns-long beam spills of approximately 10(11) protons per spill at the PS at CERN. The ionisation dose was sufficient to short circuit the silicon sensors. The dynamic behaviour of bias voltage, leakage currents and voltages over coupling capacitors were monitored during the impact. Results of pre- and post-qualification as well as the dynamic behaviour are shown. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：328 / 330

页数：3