Stabilization of amorphous GaN by oxygen

被引：23

作者：

Budde, F

Ruck, BJ

Koo, A

Granville, S

Trodahl, HJ

Bittar, A

Williams, GVM

Ariza, MJ

Bonnet, B

Jones, DJ

Metson, JB

Rubanov, S

Munroe, P

机构：

[1] Victoria Univ Wellington, MacDiarmid Inst Adv Mat & Nanotechnol, Sch Chem & Phys Sci, Wellington 6001, New Zealand

[2] Ind Res Ltd, Measurement Stand Lab, Wellington, New Zealand

[3] Univ Almeria, Dept Fis Aplicada, Grp Fis Fluidos Complejos, E-04120 Almeria, Spain

[4] Univ Montpellier 2, Lab Agregats Mol & Mat Inorgan, UMR 5072, CNRS, F-34095 Montpellier, France

[5] Univ Auckland, Dept Chem, Auckland 1020, New Zealand

[6] Univ New S Wales, Electron Microscope Unit, Sydney, NSW 2052, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 06期

关键词：

D O I：

10.1063/1.2014937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated experimentally the structure of disordered GaN films. The results suggest that it is not possible to stabilize an amorphous network in stoichiometric films, and the GaN instead consists of random-stacked nanocrystals of some 3-nm diameter. However, incorporation of 15% or more oxygen stabilizes an amorphous phase, which we attribute to the presence of nontetrahedral bonds centered on oxygen. The ionic favorability of heteropolar bonds and its strikingly simple constraint to even-membered rings are the likely causes of the instability of stoichiometric a-GaN. (c) 2005 American Institute of Physics.

引用

页数：4

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