Thermal Stability of Silicon Carbide Power Diodes

被引：73
|
作者：
Buttay, Cyril [1 ]
Raynaud, Christophe [1 ,2 ]
Morel, Herve [1 ]
Civrac, Gabriel [1 ,2 ]
Locatelli, Marie-Laure [3 ]
Morel, Florent [4 ]
机构：
[1] Inst Natl Sci Appl, CNRS, Lab Ampere, UMR 5005, F-69621 Villeurbanne, France
[2] Univ Lyon, F-69622 Villeurbanne, France
[3] Univ Toulouse 3, CNRS, Lab Plasma & Convers Energie LAPLACE, UMR 5213, F-31062 Toulouse, France
[4] Ecole Cent Lyon, F-69134 Ecully, France
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 03期
关键词：
High-temperature techniques; p-i-n diodes; power electronics; Schottky diodes; silicon carbide (SiC); SIC SCHOTTKY DIODES; DEVICES; JBS;
D O I：
10.1109/TED.2011.2181390
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon carbide (SiC) power devices can operate at much higher junction temperature than those made of silicon. However, this does not mean that SiC devices can operate without a good cooling system. To demonstrate this, the model of a merged p-i-n Schottky (MPS) SiC diode is presented, and its parameters are identified with experimental measurements. This model is then used to study the ruggedness of the diode regarding the thermal runaway phenomenon. Finally, it is shown that, where a purely unipolar diode would be unstable, the MPS structure brings increased stability.
引用
收藏
页码：761 / 769
页数：9
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