Chemical etching of thin SiOxCyHz films by post-deposition exposure to oxygen plasma

被引：20

作者：

Vallée, C

Granier, A

Aumaille, K

Cardinaud, C

Goullet, A

Coulon, N

Turban, G

机构：

[1] Univ Nantes, Lab Plasmas & Couches Minces, CNRS, IMN, F-44322 Nantes 3, France

[2] Univ Nantes, Ctr Microcaracterisat, CNRS, IMN, F-44322 Nantes 3, France

来源：

APPLIED SURFACE SCIENCE | 1999年 / 138卷

关键词：

SiO2; PECVD; ellipsometry; etching; TEM; AES;

D O I：

10.1016/S0169-4332(98)00387-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SiOxCyHz films deposited in a O-2/TEOS plasma are post-exposed to an oxygen plasma. Real-time ellipsometric measurements combined with optical emission spectroscopy show a strong etching of the film in the first minutes. Spectroscopic ellipsometry, transmission electron microscopy (TEM) and Anger spectroscopy evidence structural modifications over several 10 nanometers. It is also shown that chemical reactions with O atoms are responsible for most of this effect and that during a deposition process there is really competition between deposition and etching by O atoms. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：57 / 61

页数：5

共 12 条

[1] THE EFFECT OF POST DEPOSITION LOW-ENERGY PLASMA BOMBARDMENT ON THE ULTRA-THIN HYDROGENATED SILICON-OXIDE FILMS [J].