Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated Al2O3 as Gate Dielectrics

被引：31

作者：

Chen, Chao ^{[1
]}

Liu, Xingzhao ^{[1
]}

Tian, Benlang ^{[1
]}

Shu, Ping ^{[1
]}

Chen, Yuanfu ^{[1
]}

Zhang, Wanli ^{[1
]}

Jiang, Hongchuan ^{[1
]}

Li, Yanrong ^{[1
]}

机构：

[1] Univ Electron Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 10期

关键词：

Enhancement-mode (E-mode); fluoride-based plasma; gate dielectric; metal-insulator-semiconductor high-electron mobility transistors (MISHEMTs); PLASMA TREATMENT; DEPLETION MODE; HEMTS;

D O I：

10.1109/LED.2011.2162933

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) were realized by using fluorinated Al2O3 thin films as gate dielectrics. The depth profile of Fluoride atoms determined by X-ray photoelectron spectroscopy showed that the fluorine (F) ions were incorporated into the surface (approximately 2 nm) of the Al2O3 gate dielectrics. With proper amount of F-ion incorporation, the threshold voltage of MISHEMTs shifted from -4.8 to 0.11 V, converting depletion-mode (D-mode) MISHEMTs to E-mode ones. The E-mode MISHEMTs exhibited high performances including a high transconductance value of 153 mS/mm and a large saturated drain-current value I-ds of 547 mA/mm. This paves a new way to fabricate E-mode AlGaN/GaN MISHEMTs and allows the monolithic integration of E/D-mode MISHEMTs for analog integrated circuits.

引用

页码：1373 / 1375

页数：3

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