Temperature Dependence of Low-Dose Radiation-Induced Attenuation of Germanium-Doped Optical Fiber at Infrared Wavelengths

被引:11
|
作者
Morana, A. [1 ]
Campanella, C. [1 ]
Aubrey, M. [1 ,2 ,3 ]
Marin, E. [1 ]
Boukenter, A. [1 ]
Ouerdane, Y. [1 ]
Girard, S. [1 ]
机构
[1] Univ Lyon, Univ Jean Monnet, Inst Opt Grad Sch IOGS, Lab Hubert Curien,Ctr Natl Rech Sci CNRS 5516, F-42000 St Etienne, France
[2] iXBlue Photon, F-22300 Lannion, France
[3] Politecn Bari, I-70126 Bari, Italy
关键词
Radiation effects; Optical fibers; Optical fiber sensors; Attenuation; Temperature dependence; Temperature distribution; Temperature measurement; Optical fiber (OF); radiation-induced attenuation (RIA); temperature effects;
D O I
10.1109/TNS.2021.3133421
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ge-doped optical fibers (OFs) are considered radiation-tolerant waveguides. Even if their transmission in the infrared (IR) domain is degraded under irradiation, for most of the applications, their radiation-induced attenuation (RIA) remains acceptable. Space harsh environment is characterized by low dose and dose-rate constraints meaning that germanosilicate fibers are often employed for data links. However, the temperature can largely vary in space and is known to impact the RIA levels and kinetics. We studied here systematically the combined temperature and radiation effects induced on the transmission, at the telecom wavelengths, of a Ge-doped fiber, between -80 degrees C and 80 degrees C up to a total ionizing dose (TID) of 10 kGy(SiO2)-1 Mrad. Our measurements highlight larger RIA levels at low temperatures than at room temperature (RT). At our highest TID, it increases by a factor of similar to 40 and similar to 20, respectively, at 1310 and 1550 nm, when the irradiation is performed at -80 degrees C instead of RT. A model is reported to study the activation energy of the radiation-induced point defects responsible for the IR-RIA. This simple model could help in predicting the fiber vulnerability for various mission profiles.
引用
收藏
页码:512 / 517
页数:6
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