Characterizing nitrogen implant effects on 0.17μm gate oxide thickness and charge-to-breakdown

被引：0

作者：

Gupta, R ^{[1
]}

Do Thanh, L ^{[1
]}

Fuller, R ^{[1
]}

Young, A ^{[1
]}

Moser, B ^{[1
]}

Ameen, M ^{[1
]}

机构：

[1] Infineon Technol Richmond, Sandston, VA 23150 USA

来源：

2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, we characterize the effect of nitrogen implants on the charge-to-breakdown (Q(bd)) characteristics of a 0.17 mum DRAM device. The characterization data includes effect of nitrogen dose and beam currents on Qbd, the variation of nitrogen dose as measured by thermaprobe over a full cryopump lifecycle and the effect of such variation on the actual gate oxide thickness and uniformity. Sensitivities of thermaprobe and gate oxide thickness to nitrogen dose are derived from the resulting dose curves.

引用

页码：338 / 341

页数：4

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