Thermal Properties of Silicon Nitride Beams Below One Kelvin

被引：10

作者：

Wang, G. ^{[1
]}

Yefremenko, V. ^{[1
]}

Novosad, V. ^{[1
]}

Datesman, A. ^{[1
]}

Pearson, J. ^{[1
]}

Divan, R. ^{[2
]}

Chang, C. L. ^{[3
]}

Bleem, L. ^{[3
]}

Crites, A. T. ^{[3
]}

Mehl, J. ^{[3
]}

Natoli, T. ^{[3
]}

McMahon, J. ^{[4
]}

Sayre, J.

Ruhl, J. ^{[5
]}

Meyer, S. S. ^{[3
]}

Carlstrom, J. E. ^{[3
]}

机构：

[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[2] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

[3] Kavli Inst Cosmol Phys, Chicago, IL 60637 USA

[4] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[5] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2011年 / 21卷 / 03期

关键词：

Heat transport; phonons; superconducting transition edge sensor; thermal conductivity; HEAT; SCATTERING; CONDUCTIVITY; TEMPERATURES; TRANSPORT; SOLIDS;

D O I：

10.1109/TASC.2010.2089407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated thermal properties of 1 thick silicon nitride beams of different lateral dimensions. We measured the thermal conductance by simultaneously employing a TES both as a heater and as a sensor. Based upon these measurements, we calculate the thermal conductivity of the beams. We utilize a boundary limited phonon transport model and assume a temperature independent phonon mean free path. We find that the thermal conductivity is determined by the fraction of diffusive reflection at surface. The following results are obtained from 0.30 K to 0.55 K: the volume heat capacity is 0.082T + 0.502T(3) J/m(3) - K. The width dependent phonon mean free path is 6.58 mu m, 9.80 mu m and 11.55 mu m for 10 mu m, 20 mu m and 30 mu m beams respectively at a 29% surface diffusive reflection.

引用

页码：232 / 235

页数：4

共 20 条

[1] Ashcroft N.W., 1976, SOLID STATE PHYS, P457
[2] The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4
Bruls, RJ
Hintzen, HT
de With, G
Metselaar, R
[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (03) : 263 - 268
[3] Note on the conduction of heat in crystals
Casimir, HBG
[J]. PHYSICA, 1938, 5 : 495 - 500
[4] ACOUSTIC PHONON-SCATTERING AT SAPPHIRE SURFACES COATED WITH EPITAXIAL SILICON
EDDISON, CG
WYBOURNE, MN
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (26): : 5225 - 5234
[5] Radiative ballistic phonon transport in silicon-nitride membranes at low temperatures
Hoevers, HFC
Ridder, ML
Germeau, A
Bruijn, MP
de Korte, PAJ
Wiegerink, RJ
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (25) : 1 - 3
[6] Measurements of thermal transport in low stress silicon nitride films
Holmes, W
Gildemeister, JM
Richards, PL
Kotsubo, V
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (18) : 2250 - 2252
[7] Modeling of TES X-ray microcalorimeters with a novel absorber design
Iyomoto, N.
Bandler, S. R.
Brekosky, R. P.
Brown, A. -D.
Chervenak, J. A.
Figueroa-Feliciano, E.
Finkbeiner, F. M.
Kelley, R. L.
Kilbourne, C. A.
Lindeman, M. A.
Porter, F. S.
Saab, T.
Sadleir, J. E.
Smith, S. J.
[J]. JOURNAL OF LOW TEMPERATURE PHYSICS, 2008, 151 (1-2) : 406 - 412
[8] Electrical properties of background-limited membrane-isolation transition-edge sensing bolometers for Far-IR/Submillimeter direct-detection spectroscopy
Kenyon, M.
Day, P. K.
Bradford, C. M.
Bock, J. J.
Leduc, H. G.
[J]. JOURNAL OF LOW TEMPERATURE PHYSICS, 2008, 151 (1-2) : 112 - 118
[9] Progress on background-limited membrane-isolated TES bolometers for far-IR/submillimeter spectroscopy
Kenyon, M.
Day, P. K.
Bradford, C. M.
Bock, J. J.
Leduc, H. G.
[J]. MILLIMETER AND SUBMILLIMETER DETECTORS AND INSTRUMENTATION FOR ASTRONOMY III, 2006, 6275
[10] PHONON RADIATIVE HEAT-TRANSFER AND SURFACE SCATTERING
KLITSNER, T
VANCLEVE, JE
FISCHER, HE
POHL, RO
[J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7576 - 7594

← 1 2 →