Unconventional gallium oxide nanowires

被引:49
|
作者
Zhan, JH
Bando, Y
Hu, JQ
Xu, FF
Golberg, D
机构
[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[2] Natl Inst Mat Sci, Int Ctr Young Sci, Tsukuba, Ibaraki 3050044, Japan
[3] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
关键词
crystal growth; gallium; helical structures; nanowires; zigzag structures;
D O I
10.1002/smll.200500022
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Zigzag and helical beta-Ga2O3 one-dimensional nanostructures were produced by thermal evaporation of gallium oxide in the presence of gallium nitride. High-resolution TEM analysis indicates that each individual zigzag nanostructure has a periodic arrangement of three distinct blocks: two structurally perfect blocks mirrored with respect to each other on the (002) plane, and one stacking-fault- rich block sandwiched between them. In a zigzag nanostructure, the growth orientation of a beta-Ga2O3 crystal changes alternately in three blocks. The zigzag nanostructure as a whole has the [001] axial direction. In addition to zigzag nanostructures, single-crystalline helical nanowires were also obtained.
引用
收藏
页码:883 / 888
页数:6
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