Perpendicular magnetization of CoFeB on single-crystal MgO

被引：35
作者：
Lee, Kangho [1 ]
Sapan, Jonathan J. [2 ]
Kang, Seung H. [1 ]
Fullerton, Eric E. [2 ]
机构：
[1] Qualcomm Inc, Adv Technol, San Diego, CA 92121 USA
[2] Univ Calif San Diego, Ctr Magnet Recording Res, La Jolla, CA 92093 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 12期
基金：
美国国家科学基金会;
关键词：
TUNNEL-JUNCTION; ANISOTROPY;
D O I：
10.1063/1.3592986
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
CoFeB films deposited on single-crystal MgO(100) exhibit significantly reduced out-of-plane demagnetization fields after magnetic annealing in the film plane, resulting in perpendicular magnetization for a 15 angstrom CoFeB film. The perpendicular magnetic anisotropy can be enhanced further by inserting a thin Ru capping layer on top of CoFeB, resulting in perpendicular magnetization in even thicker CoFeB films. (c) 2011 American Institute of Physics. [doi:10.1063/1.3592986]
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页数：3
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