Wide bandgap III-Nitride semiconductors: opportunities for future optoelectronics

被引:0
作者
Park, YS [1 ]
机构
[1] Off Naval Res, Arlington, VA 22217 USA
关键词
III-Nitride; optoelectronics; blue; green; white LED; laser diode; ultraviolet; photodetector;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The world at the end of the 20(th) century has become "blue". Indeed, this past decade has witnessed a "blue rush" towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on oxide bandgap III-Nitride semiconductors. And the hard work has culminated with. first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials halle generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.
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页码:117 / 124
页数:8
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