Strain effects on the spin polarization of edge currents in MoS2 zig-zag nanoribbons

被引:4
作者
You, Suejeong [1 ]
Kim, Heesang [1 ]
Kim, Nammee [1 ]
机构
[1] Soongsil Univ, Dept Phys, Seoul 06978, South Korea
基金
新加坡国家研究基金会;
关键词
MoS(2)zigzagnanoribbon; Six-bandtight-bindingmodel; Straineffect; Brokenspininversionsymmetry; Wearabledevice; Metallicedgestate; TRANSITION-METAL DICHALCOGENIDES; SINGLE-LAYER MOS2; MX2; M; FABRICATION; GAS;
D O I
10.1016/j.physe.2022.115400
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The strain effects on the edge-state transport of the zigzag monolayer for a molybdenum disulfide nanoribbon are investigated numerically using a six-band tight-binding model with KWANT, where the strain effect was absorbed into the modified hopping coefficients. For metallic edge-states in a zigzag nanoribbon, introducing both an intrinsic spin-orbit coupling and local exchange field effects breaks the spin degeneracy and spin inversion symmetry to enable spin selective transport. Changes in the energy dispersion of the metallic edge -states due to uniaxial strain are asymmetric with respect to the strain direction. Transitions from metallic to insulating edge modes occur for a tensile strain of approximately 5% along the x-direction, but no such transition has been observed up to a tensile strain of 10% along the y-direction. The edge-current transmission and spin-polarized edge-currents are determined primarily by details of the energy dispersion of edge-states and are strongly affected by the incident energy of carriers for a given strain. The fully spin-polarized edge -currents can be obtained by modulating both the Fermi energy and gate potential. The results provide useful information to implement a spin-polarized current as a potential solution for wearable spin devices.
引用
收藏
页数:7
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共 53 条
  • [1] Electronic Band Structure of Transition Metal Dichalcogenides from Ab Initio and Slater-Koster Tight-Binding Model
    Angel Silva-Guillen, Jose
    San-Jose, Pablo
    Roldan, Rafael
    [J]. APPLIED SCIENCES-BASEL, 2016, 6 (10):
  • [2] Stretching and Breaking of Ultrathin MoS2
    Bertolazzi, Simone
    Brivio, Jacopo
    Kis, Andras
    [J]. ACS NANO, 2011, 5 (12) : 9703 - 9709
  • [3] Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS2
    Cappelluti, E.
    Roldan, R.
    Silva-Guillen, J. A.
    Ordejon, P.
    Guinea, F.
    [J]. PHYSICAL REVIEW B, 2013, 88 (07)
  • [4] Folded MoS2 layers with reduced interlayer coupling
    Castellanos-Gomez, Andres
    van der Zant, Herre S. J.
    Steele, Gary A.
    [J]. NANO RESEARCH, 2014, 7 (04) : 572 - 578
  • [5] Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2
    Castellanos-Gomez, Andres
    Poot, Menno
    Steele, Gary A.
    van der Zant, Herre S. J.
    Agrait, Nicolas
    Rubio-Bollinger, Gabino
    [J]. NANOSCALE RESEARCH LETTERS, 2012, 7 : 1 - 4
  • [6] Atomistic full-band simulations of monolayer MoS2 transistors
    Chang, Jiwon
    Register, Leonard F.
    Banerjee, Sanjay K.
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (22)
  • [7] Feng J, 2012, NAT PHOTONICS, V6, P865, DOI [10.1038/NPHOTON.2012.285, 10.1038/nphoton.2012.285]
  • [8] Van der Waals heterostructures
    Geim, A. K.
    Grigorieva, I. V.
    [J]. NATURE, 2013, 499 (7459) : 419 - 425
  • [9] Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides
    Ghorbani-Asl, M.
    Borini, S.
    Kuc, A.
    Heine, T.
    [J]. PHYSICAL REVIEW B, 2013, 87 (23)
  • [10] Kwant: a software package for quantum transport
    Groth, Christoph W.
    Wimmer, Michael
    Akhmerov, Anton R.
    Waintal, Xavier
    [J]. NEW JOURNAL OF PHYSICS, 2014, 16