Radiation-induced defects in MOS structures after irradiation with high-energy Ar, Kr, Bi heavy ions

被引：6

作者：

Stano, J ^{[1
]}

Skuratov, VA

Ziska, M

Kovác, P

机构：

[1] Cyclotron Ctr Slovak Republ, Slovak Off Standards Metrol & Testing, Bratislava 81005, Slovakia

[2] Joint Inst Nucl Res, Flerov Lab Nucl React, Dubna 141980, Russia

[3] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat, Dept Microelect, Bratislava 81219, Slovakia

来源：

VACUUM | 2005年 / 78卷 / 2-4期

关键词：

MOS structure; Q-DLTS; radiation damage; high-energy heavy ions; thermal-spike model;

D O I：

10.1016/j.vacuum.2005.01.098

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Radiation damage in the MOS (metal-oxide-semiconductor) structures irradiated with At, Kr and Bi heavy ions with energies from 1 to 7.5MeV/nucl. has been studied using charge deep level transient spectroscopy (Q-DLTS) and feedback charge capacitance voltage (C-V) techniques. Four dominant well-known deep levels such as vacancy-oxygen (VO) complex, divacancy (VV2-) in the double negative charge state and composite VV-+VSb complex were registered versus ion fluence and annealing temperature. It was shown that VO center concentration at the near-surface silicon substrate layer is determined by ion energy loss in elastic collisions and no effect of high-level electronic stopping power was detected. At the same time, the value of the positive radiation-induced defect charge in the oxide layer was decreased under Bi ions irradiation. Thermal treatment in air ambient at 250 degrees C restores CV characteristics of the MOS samples to that of un-irradiated state. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：627 / 630

页数：4

共 11 条

[1] Radiation damage in MOS structures, irradiated with high-energy heavy ions and fast neutrons, with regard to charge DLTS and C-V measurements
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GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 453 - 458
[2] TSV Technology and High-Energy Heavy Ions Radiation Impact Review
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[3] Hardening of ODS ferritic steels under irradiation with high-energy heavy ions
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[4] Molecular dynamics simulation of structural changes in metals under irradiation with high-energy heavy ions
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[5] Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation
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PHYSICA B-CONDENSED MATTER, 2006, 376 : 382 - 384
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[7] Surface defects in Al2O3 and MgO irradiated with high-energy heavy ions
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NUCLEAR MATERIALS AND ENERGY, 2023, 37
[9] Change in the Charge State of MOS Structures with a Radiation-Induced Charge under High-Field Injection of Electrons
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JOURNAL OF SURFACE INVESTIGATION, 2023, 17 (01): : 48 - 53
[10] Change in the Charge State of MOS Structures with a Radiation-Induced Charge under High-Field Injection of Electrons
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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2023, 17 : 48 - 53

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