Phonon-assisted electronic transitions in phosphorus-doped n-type chemical vapor deposition diamond films

被引：27

作者：

Haenen, K

Meykens, K

Nesládek, M

Knuyt, G

Stals, LM

Teraji, T

Koizumi, S

Gheeraert, E

机构：

[1] Limburgs Univ Ctr, Div Mat Phys, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium

[2] Natl Inst Res Inorgan Mat, Adv Mat Res Ctr, Tsukuba, Ibaraki 3050044, Japan

[3] CNRS, LEPES, F-38042 Grenoble, France

来源：

关键词：

phonon; phosphorus doping; photoconductivity; spectroscopy;

D O I：

10.1016/S0925-9635(00)00511-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

One year ago we published the first results on the electronic structure of the P-level in 1000 ppm PH3/CH4 doped {111}-oriented n-type diamond films, using the quasi-steady-state photocurrent technique (PC) and photothermal ionization spectroscopy (PTIS). In this work we have extended our measurements at various temperatures (4.2-77.4 K) to samples with various doping levels (100, 500 and 1000 ppm PH3/CH4). This allowed us to obtain more precise results for the electronic structure of the phosphorus defect in homoepitaxial n-type CVD diamond films, making use of the 155 meV LO-phonon to explain the oscillatory photoconductivity. These results are confirmed by the PTIS maxima and Fourier transform infra-red (FTIR) data. In addition we present first measurements on a 2000-ppm doped {100}-oriented sample. (C) 2001 Elsevier Science B.V. Ah rights reserved.

引用

页码：439 / 443

页数：5

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