Resistive switching characteristics in memristors with Al2O3/TiO2 and TiO2/Al2O3 bilayers

被引：26

作者：

Alekseeva, Liudmila ^{[1
]}

Nabatame, Toshihide ^{[2
]}

Chikyow, Toyohiro ^{[2
]}

Petrov, Anatolii ^{[1
]}

机构：

[1] St Petersburg Electrotech Univ, St Petersburg 197376, Russia

[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 08期

关键词：

MECHANISMS; LAYER;

D O I：

10.7567/JJAP.55.08PB02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Differences between the resistive switching characteristics of Al2O3/TiO2 and TiO2/Al2O3 bilayer structures, fabricated by atomic layer deposition at 200 degrees C and post-deposition annealing, were studied in Pt bottom electrode (Pt-BE)/insulator/Pt top electrode (Pt-TE) capacitors. The Pt-BE/Al2O3/TiO2/Pt-TE capacitor exhibits stable bipolar resistive switching with an on-resistance/off-resistance ratio of similar to 10(2) controlled by a small voltage of +/- 0.8 V. The forming process occurs in two steps of breaking of the Al2O3 layer and transfer of oxygen vacancies (VO) into the TiO2 layer. The capacitor showed poor endurance, particularly in the high-resistance state under vacuum conditions. This indicates that the insulating TiO2 layer without VO is not formed near the Al2O3 layer because oxygen cannot be introduced from the exterior. On the other hand, in the Pt-BE/TiO2/Al2O3/Pt-TE capacitor, multilevel resistive switching with several applied voltage-dependent nonvolatile states is observed. The switching mechanism corresponds to the Al2O3 layer's trapped VO concentration, which is controlled by varying the applied voltage. (C) 2016 The Japan Society of Applied Physics

引用

页数：5

共 38 条

[1]

Bonch-Bruevich V. L., 1977, FIZIKA POLUPROVODNIK, P238

[2] Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films [J].

Chen, Min-Chen ;

Chang, Ting-Chang ;

Tsai, Chih-Tsung ;

Huang, Sheng-Yao ;

Chen, Shih-Ching ;

Hu, Chih-Wei ;

Sze, Simon M. ;

Tsai, Ming-Jinn .

APPLIED PHYSICS LETTERS, 2010, 96 (26)

[3] Study on the resistive switching time of TiO2 thin films [J].

Choi, Byung Joon ;

Choi, Seol ;

Kim, Kyung Min ;

Shin, Yong Cheol ;

Hwang, Cheol Seong ;

Hwang, Sung-Yeon ;

Cho, Sung-sil ;

Park, Sanghyun ;

Hong, Suk-Kyoung .

APPLIED PHYSICS LETTERS, 2006, 89 (01)

[4] Resistance switching memories are memristors [J].

Chua, Leon .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 102 (04) :765-783

[5] MEMRISTIVE DEVICES AND SYSTEMS [J].

CHUA, LO ;

KANG, SM .

PROCEEDINGS OF THE IEEE, 1976, 64 (02) :209-223

[6] MEMRISTOR - MISSING CIRCUIT ELEMENT [J].

CHUA, LO .

IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05) :507-+

[7] Resistive switching in TiO2-based metal-insulator-metal structures with Al2O3 barrier layer at the metal/dielectric interface [J].

Hudec, B. ;

Paskaleva, A. ;

Jancovic, P. ;

Derer, J. ;

Fedor, J. ;

Rosova, A. ;

Dobrocka, E. ;

Froehlich, K. .

THIN SOLID FILMS, 2014, 563 :10-14

[8] Modeling for bipolar resistive memory switching in transition-metal oxides [J].

Hur, Ji Hyun ;

Lee, Myoung-Jae ;

Lee, Chang Bum ;

Kim, Young-Bae ;

Kim, Chang-Jung .

PHYSICAL REVIEW B, 2010, 82 (15)

[9] Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories [J].

Ielmini, D. ;

Nardi, F. ;

Cagli, C. .

NANOTECHNOLOGY, 2011, 22 (25)

[10] Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes [J].

Jeon, Heeyoung ;

Park, Jingyu ;

Jang, Woochool ;

Kim, Hyunjung ;

Ahn, Seungbae ;

Jeon, Ki-Joon ;

Seo, Hyungtak ;

Jeon, Hyeongtag .

CARBON, 2014, 75 :209-216

← 1 2 3 4 →