Production and processing of graphene and related materials

被引:392
作者
Backes, Claudia [1 ,2 ,3 ]
Abdelkader, Amr M. [4 ]
Alonso, Concepcion [5 ]
Andrieux-Ledier, Amandine [6 ]
Arenal, Raul [7 ,8 ,78 ]
Azpeitia, Jon [9 ]
Balakrishnan, Nilanthy [10 ]
Banszerus, Luca [11 ,12 ]
Barjon, Julien [13 ]
Bartali, Ruben [14 ]
Bellani, Sebastiano [15 ]
Berger, Claire [16 ,17 ]
Berger, Reinhard [18 ,19 ]
Ortega, M. M. Bernal [20 ]
Bernard, Carlo [21 ]
Beton, Peter H. [10 ]
Beyer, Andre [22 ]
Bianco, Alberto [23 ]
Boggild, Peter [71 ]
Bonaccorso, Francesco [15 ,74 ]
Barin, Gabriela Borin [24 ]
Botas, Cristina [25 ]
Bueno, Rebeca A. [9 ]
Carriazo, Daniel [25 ,26 ]
Castellanos-Gomez, Andres [9 ]
Christian, Meganne [27 ]
Ciesielski, Artur [28 ]
Ciuk, Tymoteusz [29 ]
Cole, Matthew T. [30 ]
Coleman, Jonathan [2 ,3 ]
Coletti, Camilla [15 ,31 ]
Crema, Luigi [14 ]
Cun, Huanyao [21 ]
Dasler, Daniela [32 ,33 ]
De Fazio, Domenico [4 ]
Diez, Noel [25 ]
Drieschner, Simon [34 ]
Duesberg, Georg S. [35 ]
Fasel, Roman [24 ,37 ]
Feng, Xinliang [18 ,19 ]
Fina, Alberto [20 ]
Forti, Stiven [31 ]
Galiotis, Costas [38 ,39 ]
Garberoglio, Giovanni [40 ,41 ]
Garcia, Jorge M. [70 ]
Antonio Garrido, Jose [43 ]
Gibertini, Marco [44 ,45 ]
Goelzhaeuser, Armin [22 ]
Gomez, Julio [46 ]
Greber, Thomas [21 ]
机构
[1] Heidelberg Univ, Phys Chem Inst, Neuenheimer Feld 253, D-69120 Heidelberg, Germany
[2] Trinity Coll Dublin, CRANN, Sch Phys, Dublin 2, Ireland
[3] Trinity Coll Dublin, Adv Mat & BioEngn Res AMBER, Dublin 2, Ireland
[4] Univ Cambridge, Cambridge Graphene Ctr, 9 JJ Thomson Ave, Cambridge CB3 0FA, England
[5] Autonomous Univ Madrid, Dept Appl Phys Chem, E-28049 Madrid, Spain
[6] Univ Paris Saclay, Dept Phys Instrumentat Environm & Espace, ONERA, 29 Ave Div Leclerc, F-92320 Chatillon, France
[7] ARAID Fundat, Calle Mariano Luna, Zaragoza 50018, Spain
[8] Univ Zaragoza, INA, LMA, Calle Mariano Esquillor, Zaragoza 50018, Spain
[9] CSIC, Inst Ciencia Mat Madrid, Mat Sci Factory, C Sor Juana Ines de la Cruz 3, E-28049 Madrid, Spain
[10] Univ Nottingham, Sch Phys & Astron, Univ Pk, Nottingham NG7 2RD, England
[11] Rhein Westfal TH Aachen, JARA FIT, Aachen, Germany
[12] Rhein Westfal TH Aachen, Inst Phys 2, Aachen, Germany
[13] Univ Paris Saclay, Univ Versailles ST Quentin, CNRS, Grp Etud Matiere Condensee GEMaC, 45 Ave Etats Unis, Versailles, France
[14] Fdn Bruno Kessler, Via Sommarive 18, I-38123 Trento, Italy
[15] Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
[16] Univ Grenoble Alpes, CNRS, Inst Neel, 25 Rue Martyrs, F-38042 Grenoble, France
[17] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[18] Tech Univ Dresden, Cfaed, Mommsenstr 4, D-01062 Dresden, Germany
[19] Tech Univ Dresden, Dept Chem & Food Chem, Mommsenstr 4, D-01062 Dresden, Germany
[20] Politecn Torino, Dipartimento Sci Applicata & Tecnol, Alessandria Campus,Viale Teresa Michel 5, I-15121 Alessandria, Italy
[21] Univ Zurich, Phys Inst, Winterthurerstr 190, CH-8057 Zurich, Switzerland
[22] Bielefeld Univ, Phys Supramol Syst, Univ Str 25, D-33615 Bielefeld, Germany
[23] Univ Strasbourg, CNRS, Immunol Lmmunopathol & Therapeut Chem, UPR 3572, F-67000 Strasbourg, France
[24] Empa, Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
[25] CIC EnergiGUNE, Parque Tecnol Alava, Minano 01510, Alava, Spain
[26] Basque Fdn Sci, IKERBASQUE, Bilbao 48013, Spain
[27] CNR, Sect Bologna, IMM, Via Gobetti 101, I-40129 Bologna, Italy
[28] Univ Strasbourg, CNRS, ISIS, 8 Allee Gaspard Monge, F-67000 Strasbourg, France
[29] Inst Technol Mat Elekt, Wolczynska 133, PL-01919 Warsaw, Poland
[30] Dept Elect & Elect Engn, Bath BA2 7AY, Avon, England
[31] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, Pzza S Silvestro 12, I-56127 Pisa, Italy
[32] Friedrich Alexander Univ Erlangen Nurnberg, Chair Organ Chem II, Nikolaus Fiebiger Str 10, D-91058 Erlangen, Germany
[33] Friedrich Alexander Univ Erlangen Nurnberg, Joint Inst Adv Mat & Proc, Nikolaus Fiebiger Str 10, D-91058 Erlangen, Germany
[34] Univ Munich, Walter Schottky Inst Tech, Coulombwall 4, D-85748 Garching, Germany
[35] Univ Bundeswehr Munchen, Inst Phys, D-85577 Neubiberg, Germany
[36] Univ Eastern Finland, Inst Photon, Yliopistokatu 7, Joensuu 80100, Finland
[37] Univ Bern, Dept Chem & Biochem, CH-3012 Bern, Switzerland
[38] Univ Patras, Dept Chem Engn, Patras 26504, Greece
[39] Fdn Res & Technol Hellas FORTH ICE HT, Inst Chem Engn Sci, Patras 26504, Greece
[40] European Ctr Theoret Studies Nucl Phys & Related, I-38123 Trento, Italy
[41] INFN, TIFPA, I-38123 Trento, Italy
[42] Charles Univ Prague, Fac Math & Phys, CR-18000 Prague 8, Czech Republic
[43] Inst Catalan Nanotecnol ICN2, UAB Campus, Bellaterra 08193, Barcelona, Spain
[44] Ecole Polytech Fed Lausanne, Theory & Simulat Mat THEOS, CH-1015 Lausanne, Switzerland
[45] Ecole Polytech Fed Lausanne, Natl Ctr Computat Design & Discovery Novel Mat Ma, CH-1015 Lausanne, Switzerland
[46] Avanzare Innovac Tecnol SL, Avda Lentiscares 4-6, Navarrete, Spain
[47] Ecole Polytech Fed Lausanne, Elect Engn Inst, CH-1015 Lausanne, Switzerland
[48] Ecole Polytech Fed Lausanne, Inst Mat Sci & Engn, CH-1015 Lausanne, Switzerland
[49] Aristotle Univ Thessaloniki, Sch Phys, Dept Solid State Phys, Thessaloniki 54124, Greece
[50] Univ Manchester, Manchester, England
基金
英国工程与自然科学研究理事会;
关键词
processing of layered materials; inks of layered materials; characterization of layered materials; functionalization of layered materials; synthesis of graphene and related materials; growth of layered materials; CHEMICAL-VAPOR-DEPOSITION; HEXAGONAL BORON-NITRIDE; SINGLE-CRYSTAL GRAPHENE; FEW-LAYER GRAPHENE; HIGH-QUALITY GRAPHENE; SELF-ASSEMBLED MONOLAYERS; LIQUID-PHASE EXFOLIATION; WALLED CARBON NANOTUBES; ON-SURFACE SYNTHESIS; TRANSITION-METAL DICHALCOGENIDES;
D O I
10.1088/2053-1583/ab1e0a
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures. We adopt a 'hands-on' approach, providing practical details and procedures as derived from literature as well as from the authors' experience, in order to enable the reader to reproduce the results. Section I is devoted to 'bottom up' approaches, whereby individual constituents are pieced together into more complex structures. We consider graphene nanoribbons (GNRs) produced either by solution processing or by on-surface synthesis in ultra high vacuum (UHV), as well carbon nanomembranes (CNM). Production of a variety of GNRs with tailored band gaps and edge shapes is now possible. CNMs can be tuned in terms of porosity, crystallinity and electronic behaviour. Section II covers 'top down' techniques. These rely on breaking down of a layered precursor, in the graphene case usually natural crystals like graphite or artificially synthesized materials, such as highly oriented pyrolythic graphite, monolayers or few layers (FL) flakes. The main focus of this section is on various exfoliation techniques in a liquid media, either intercalation or liquid phase exfoliation (LPE). The choice of precursor, exfoliation method, medium as well as the control of parameters such as time or temperature are crucial. A definite choice of parameters and conditions yields a particular material with specific properties that makes it more suitable for a targeted application. We cover protocols for the graphitic precursors to graphene oxide (GO). This is an important material for a range of applications in biomedicine, energy storage, nanocomposites, etc. Hummers' and modified Hummers' methods are used to make GO that subsequently can be reduced to obtain reduced graphene oxide (RGO) with a variety of strategies. GO flakes are also employed to prepare three-dimensional (3d) low density structures, such as sponges, foams, hydro- or aerogels. The assembly of flakes into 3d structures can provide improved mechanical properties. Aerogels with a highly open structure, with interconnected hierarchical pores, can enhance the accessibility to the whole surface area, as relevant for a number of applications, such as energy storage. The main recipes to yield graphite intercalation compounds (GICs) are also discussed. GICs are suitable precursors for covalent functionalization of graphene, but can also be used for the synthesis of uncharged graphene in solution. Degradation of the molecules intercalated in GICs can be triggered by high temperature treatment or microwave irradiation, creating a gas pressure surge in graphite and exfoliation. Electrochemical exfoliation by applying a voltage in an electrolyte to a graphite electrode can be tuned by varying precursors, electrolytes and potential. Graphite electrodes can be either negatively or positively intercalated to obtain GICs that are subsequently exfoliated. We also discuss the materials that can be amenable to exfoliation, by employing a theoretical data-mining approach. The exfoliation of LMs usually results in a heterogeneous dispersion of flakes with different lateral size and thickness. This is a critical bottleneck for applications, and hinders the full exploitation of GRMs produced by solution processing. The establishment of procedures to control the morphological properties of exfoliated GRMs, which also need to be industrially scalable, is one of the key needs. Section III deals with the processing of flakes. (Ultra)centrifugation techniques have thus far been the most investigated to sort GRMs following ultrasonication, shear mixing, ball milling, microfluidization, and wet-jet milling. It allows sorting by size and thickness. Inks formulated from GRM dispersions can be printed using a number of processes, from inkjet to screen printing. Each technique has specific rheological requirements, as well as geometrical constraints. The solvent choice is critical, not only for the GRM stability, but also in terms of optimizing printing on different substrates, such as glass, Si, plastic, paper, etc, all with different surface energies. Chemical modifications of such substrates is also a key step. Sections IV-VII are devoted to the growth of GRMs on various substrates and their processing after growth to place them on the surface of choice for specific applications. The substrate for graphene growth is a key determinant of the nature and quality of the resultant film. The lattice mismatch between graphene and substrate influences the resulting crystallinity. Growth on insulators, such as SiO2, typically results in films with small crystallites, whereas growth on the close-packed surfaces of metals yields highly crystalline films. Section IV outlines the growth of graphene on SiC substrates. This satisfies the requirements for electronic applications, with well-defined graphene-substrate interface, low trapped impurities and no need for transfer. It also allows graphene structures and devices to be measured directly on the growth substrate. The flatness of the substrate results in graphene with minimal strain and ripples on large areas, allowing spectroscopies and surface science to be performed. We also discuss the surface engineering by intercalation of the resulting graphene, its integration with Si-wafers and the production of nanostructures with the desired shape, with no need for patterning. Section V deals with chemical vapour deposition (CVD) onto various transition metals and on insulators. Growth on Ni results in graphitized polycrystalline films. While the thickness of these films can be optimized by controlling the deposition parameters, such as the type of hydrocarbon precursor and temperature, it is difficult to attain single layer graphene (SLG) across large areas, owing to the simultaneous nucleation/growth and solution/precipitation mechanisms. The differing characteristics of polycrystalline Ni films facilitate the growth of graphitic layers at different rates, resulting in regions with differing numbers of graphitic layers. High-quality films can be grown on Cu. Cu is available in a variety of shapes and forms, such as foils, bulks, foams, thin films on other materials and powders, making it attractive for industrial production of large area graphene films. The push to use CVD graphene in applications has also triggered a research line for the direct growth on insulators. The quality of the resulting films is lower than possible to date on metals, but enough, in terms of transmittance and resistivity, for many applications as described in section V. Transfer technologies are the focus of section VI. CVD synthesis of graphene on metals and bottom up molecular approaches require SLG to be transferred to the final target substrates. To have technological impact, the advances in production of high-quality large-area CVD graphene must be commensurate with those on transfer and placement on the final substrates. This is a prerequisite for most applications, such as touch panels, anticorrosion coatings, transparent electrodes and gas sensors etc. New strategies have improved the transferred graphene quality, making CVD graphene a feasible option for CMOS foundries. Methods based on complete etching of the metal substrate in suitable etchants, typically iron chloride, ammonium persulfate, or hydrogen chloride although reliable, are time- and resource-consuming, with damage to graphene and production of metal and etchant residues. Electrochemical delamination in a low-concentration aqueous solution is an alternative. In this case metallic substrates can be reused. Dry transfer is less detrimental for the SLG quality, enabling a deterministic transfer. There is a large range of layered materials (LMs) beyond graphite. Only few of them have been already exfoliated and fully characterized. Section VII deals with the growth of some of these materials. Amongst them, h-BN, transition metal tri- and di-chalcogenides are of paramount importance. The growth of h-BN is at present considered essential for the development of graphene in (opto) electronic applications, as h-BN is ideal as capping layer or substrate. The interesting optical and electronic properties of TMDs also require the development of scalable methods for their production. Large scale growth using chemical/physical vapour deposition or thermal assisted conversion has been thus far limited to a small set, such as h-BN or some TMDs. Heterostructures could also be directly grown. Section VIII discusses advances in GRM functionalization. A broad range of organic molecules can be anchored to the sp(2) basal plane by reductive functionalization. Negatively charged graphene can be prepared in liquid phase (e.g. via intercalation chemistry or electrochemically) and can react with electrophiles. This can be achieved both in dispersion or on substrate. The functional groups of GO can be further derivatized. Graphene can also be noncovalently functionalized, in particular with polycyclic aromatic hydrocarbons that assemble on the sp(2) carbon network by pi-pi stacking. In the liquid phase, this can enhance the colloidal stability of SLG/FLG. Approaches to achieve noncovalent on-substrate functionalization are also discussed, which can chemically dope graphene. Research efforts to derivatize CNMs are also summarized, as well as novel routes to selectively address defect sites. In dispersion, edges are the most dominant defects and can be covalently modified. This enhances colloidal stability without modifying the graphene basal plane. Basal plane point defects can also be modified, passivated and healed in ultra-high vacuum. The decoration of graphene with metal nanoparticles (NPs) has also received considerable attention, as it allows to exploit synergistic effects between NPs and graphene. Decoration can be either achieved chemically or in the gas phase. All LMs, can be functionalized and we summarize emerging approaches to covalently and noncovalently functionalize MoS2 both in the liquid and on substrate. Section IX describes some of the most popular characterization techniques, ranging from optical detection to the measurement of the electronic structure. Microscopies play an important role, although macroscopic techniques are also used for the measurement of the properties of these materials and their devices. Raman spectroscopy is paramount for GRMs, while PL is more adequate for non-graphene LMs (see section IX.2). Liquid based methods result in flakes with different thicknesses and dimensions. The qualification of size and thickness can be achieved using imaging techniques, like scanning probe microscopy (SPM) or transmission electron microscopy (TEM) or spectroscopic techniques. Optical microscopy enables the detection of flakes on suitable surfaces as well as the measurement of optical properties. Characterization of exfoliated materials is essential to improve the GRM metrology for applications and quality control. For grown GRMs, SPM can be used to probe morphological properties, as well as to study growth mechanisms and quality of transfer. More generally, SPM combined with smart measurement protocols in various modes allows one to get obtain information on mechanical properties, surface potential, work functions, electrical properties, or effectiveness of functionalization. Some of the techniques described are suitable for 'in situ' characterization, and can be hosted within the growth chambers. If the diagnosis is made 'ex situ', consideration should be given to the preparation of the samples to avoid contamination. Occasionally cleaning methods have to be used prior to measurement.
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共 1785 条
[1]   Deep eutectic solvents formed between choline chloride and carboxylic acids: Versatile alternatives to ionic liquids [J].
Abbott, AP ;
Boothby, D ;
Capper, G ;
Davies, DL ;
Rasheed, RK .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (29) :9142-9147
[2]  
Abbott S., 2008, How to be a great screen printer, MacDermid Autotype
[3]   Mechanochemical Exfoliation of 2D Crystals in Deep Eutectic Solvents [J].
Abdelkader, A. M. ;
Kinloch, I. A. .
ACS SUSTAINABLE CHEMISTRY & ENGINEERING, 2016, 4 (08) :4465-4472
[4]   How to get between the sheets: a review of recent works on the electrochemical exfoliation of graphene materials from bulk graphite [J].
Abdelkader, A. M. ;
Cooper, A. J. ;
Dryfe, R. A. W. ;
Kinloch, I. A. .
NANOSCALE, 2015, 7 (16) :6944-6956
[5]   Electrochemical exfoliation of graphite in quaternary ammonium-based deep eutectic solvents: a route for the mass production of graphane [J].
Abdelkader, Amr M. ;
Patten, Hollie V. ;
Li, Zheling ;
Chen, Yiqiang ;
Kinloch, Ian A. .
NANOSCALE, 2015, 7 (26) :11386-11392
[6]   Continuous Electrochemical Exfoliation of Micrometer-Sized Graphene Using Synergistic Ion Intercalations and Organic Solvents [J].
Abdelkader, Amr M. ;
Kinloch, Ian A. ;
Dryfe, Robert A. W. .
ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (03) :1632-1639
[7]   Unifying Principles of the Reductive Covalent Graphene Functionalization [J].
Abellan, Gonzalo ;
Schirowski, Milan ;
Edelthalhammer, Konstantin F. ;
Fickert, Michael ;
Werbach, Katharina ;
Peterlik, Herwig ;
Hauke, Frank ;
Hirsch, Andreas .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2017, 139 (14) :5175-5182
[8]   Hybrid Materials Based on Magnetic Layered Double Hydroxides: A Molecular Perspective [J].
Abellan, Gonzalo ;
Marti-Gastaldo, Carlos ;
Ribera, Antonio ;
Coronado, Eugenio .
ACCOUNTS OF CHEMICAL RESEARCH, 2015, 48 (06) :1601-1611
[9]   Visibility of graphene flakes on a dielectric substrate [J].
Abergel, D. S. L. ;
Russell, A. ;
Fal'ko, Vladimir I. .
APPLIED PHYSICS LETTERS, 2007, 91 (06)
[10]   SUPER ESCA - FIRST BEAMLINE OPERATING AT ELETTRA [J].
ABRAMI, A ;
BARNABA, M ;
BATTISTELLO, L ;
BIANCO, A ;
BRENA, B ;
CAUTERO, G ;
CHEN, QH ;
COCCO, D ;
COMELLI, G ;
CONTRINO, S ;
DEBONA, F ;
DIFONZO, S ;
FAVA, C ;
FINETTI, P ;
FURLAN, P ;
GALIMBERTI, A ;
GAMBITTA, A ;
GIURESSI, D ;
GODNIG, R ;
JARK, W ;
LIZZIT, S ;
MAZZOLINI, F ;
MELPIGNANO, P ;
OLIVI, L ;
PAOLUCCI, G ;
PUGLIESE, R ;
QIAN, SN ;
ROSEI, R ;
SANDRIN, G ;
SAVOIA, A ;
SERGO, R ;
SOSTERO, G ;
TOMMASINI, R ;
TUDOR, M ;
VIVODA, D ;
WEI, FQ ;
ZANINI, F .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (02) :1618-1620