Direct Z-scheme Cs2O-Bi2O3-ZnO heterostructures for photocatalytic overall water splitting

被引:103
作者
Hezam, Abdo [1 ]
Namratha, K. [1 ]
Drmosh, Q. A. [2 ,3 ]
Ponnamma, Deepalekshmi [4 ]
Saeed, Adel Morshed Nagi [5 ]
Ganesh, V. [6 ]
Neppolian, B. [7 ]
Byrappa, K. [1 ,8 ]
机构
[1] Univ Mysore, Vijana Bhavana, Ctr Mat Sci & Technol, Manasagangothiri 570006, Mysuru, India
[2] King Fahd Univ Petr & Minerals, Phys Dept, Dhahran 31261, Saudi Arabia
[3] King Fahd Univ Petr & Minerals, Ctr Res Excellence Nanotechnol, Dhahran 31261, Saudi Arabia
[4] Qatar Univ, Ctr Adv Mat, POB 2713, Doha, Qatar
[5] JSS Sci & Technol Univ, Sri Jayachamarajendra Coll Engn, Dept Polymer Sci & Technol, Mysuru 570006, India
[6] SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Madras 603203, Tamil Nadu, India
[7] SRM Inst Sci & Technol, SRM Res Inst, Energy & Environm Remediat Lab, Madras 603203, Tamil Nadu, India
[8] Adichunchanagiri Univ, NH 75, Bg Nagara 571448, India
关键词
HYDROGEN-PRODUCTION; ZNO NANOSTRUCTURES; DEGRADATION; HETEROJUNCTION; SEMICONDUCTORS; BI2O3; PHOTOLUMINESCENCE; COMPOSITES; GENERATION; SEPARATION;
D O I
10.1039/c8ta08033j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, a direct Z-scheme Cs2O-Bi2O3-ZnO heterostructure without any electron mediator is fabricated by a simple solution combustion route. Cs2O is chosen as a sensitizer to expand the light absorption range, and in addition, its conduction band minimum (CBM) and valence band maximum (VBM) positions are suitable to construct a direct Z-scheme system with ZnO and Bi2O3. Structural and elemental analyses show clear evidence for heterostructure formation. The Z-scheme charge carrier migration pathway in Cs2O-Bi2O3-ZnO is confirmed by high resolution XPS and ESR studies. The fabricated heterostructure exhibits a good ability to split water to H-2 and O-2 under simulated sunlight irradiation without any sacrificial agents or co-catalysts and has excellent photostability. The apparent quantum efficiency of the optimized Cs2O-Bi2O3-ZnO heterostructure reaches up to 0.92% at 420 nm. The excellent efficiency of this fabricated heterostructure is attributed to the efficient charge carrier separation, the high redox potential of the CBM and VBM benefiting from a direct Z-scheme charge carrier migration pathway and the extended light absorption range.
引用
收藏
页码:21379 / 21388
页数:10
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