Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

被引：14
|
作者：
Song, HZ [1 ]
Xia, CR [1 ]
Jiang, YZ [1 ]
Meng, GY [1 ]
Peng, DK [1 ]
机构：
[1] Univ Sci & Technol China, Dept Mat Sci & Engn, Lab Solid State Chem & Inorgan Membranes, Hefei 230026, Peoples R China
来源：
MATERIALS LETTERS | 2003年 / 57卷 / 24-25期
关键词：
aerosol; MOCVD; thin films; Y2O3 stabilized ZrO2;
D O I：
10.1016/S0167-577X(03)00187-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel aerosol-assisted metalorganic chemical vapor deposition (AA-MOCVD) technology was developed to prepare of Y2O3-stabilized ZrO2 (YSZ) thin films on polycrystalline substrates at the temperatures of 350-700degreesC from metal beta-diketonate chelates precursors. Thin films with rather uniform and amorphous microstructure were obtained at the substrate temperatures below 600degreesC and changed into full cubic microstructure after annealing treatment at 1100degreesC for 3 h. A detailed deposition mechanism has described the AA-MOCVD process. The resistance measurement of electrochemical cell Pt/Ni-YDC/YSZ film/Pt showed that conductivity activation energy (E-a) changed at 610degreesC with 85.8 kJ/mol at 610-850degreesC and 136 kJ/mol at 350-610degreesC. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：3833 / 3838
页数：6
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