Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO2 Thin Film for Dielectric in DRAM Capacitor

被引：16

作者：

Kim, Byunguk ^{[1
]}

Choi, Yeonsik ^{[1
]}

Lee, Dahyun ^{[2
]}

Byun, Younghun ^{[2
]}

Jung, Chanwon ^{[3
]}

Jeon, Hyeongtag ^{[1
,3
]}

机构：

[1] Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South Korea

[2] Mecaro Adv Precursor Syst R&D Inst, Daejeon, South Korea

[3] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2021年 / 10卷 / 08期

关键词：

OPTICAL-PROPERTIES; BAND-GAP; PERFORMANCE; GROWTH; AL2O3; TICL4; SIZE;

D O I：

10.1149/2162-8777/ac1c9c

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We researched the reduction of leakage current by Al doping in TiO2 thin film. During the TiO2 thin film deposition process, Al2O3 thin film deposition was used for Al doping. XPS analysis showed that the greater the amount of Al doping in TiO2 thin film, the fewer oxygen vacancies were found. The n-type characteristic of TiO2 thin films is reduced as oxygen vacancies are reduced. An anatase (211) peak was detected by GIXRD analysis, and crystallinity was reduced with greater Al doping; the full width half maximum showed the crystalline size was reduced. UV-visible analysis showed the energy bandgap increased as the crystalline size became smaller, and I-V measurements showed the current density decreased to 3 x 10(-4 )A cm(-2) (As-dep TiO2: 10(-1) A cm(-2)) with Al doping. The dielectric constant remained above 20 even when doped with Al, confirming the superior properties of Al-doping TiO2 thin film over conventional TiO2 thin films.

引用

页数：7

共 43 条

[1] MORPHOLOGY AND STRUCTURE OF TIO2 THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION [J].

AARIK, J ;

AIDLA, A ;

UUSTARE, T ;

SAMMELSELG, V .

JOURNAL OF CRYSTAL GROWTH, 1995, 148 (03) :268-275

[2] Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors [J].

Aarik, Lauri ;

Arroval, Tonis ;

Rammula, Raul ;

Maendar, Hugo ;

Sammelselg, Vaeino ;

Hudec, Boris ;

Husekova, Kristina ;

Froehlich, Karol ;

Aarik, Jaan .

THIN SOLID FILMS, 2014, 565 :19-24

[3] Photoluminescence of anatase and rutile TiO2 particles [J].

Abazovic, Nadica D. ;

Comor, Mirjana I. ;

Dramicanin, Miroslav D. ;

Jovanovic, Dragana J. ;

Ahrenkiel, S. Phillip ;

Nedeljkovic, Jovan M. .

JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (50) :25366-25370

[4] Influence of Al2O3:TiO2 ratio on the structural and optical properties of TiO2-Al2O3 nano-composite films produced by sol gel method [J].

Arier, Umit Ozlem Akkaya ;

Tepehan, Fatma Zehra .

COMPOSITES PART B-ENGINEERING, 2014, 58 :147-151

[5] Formation of oxygen vacancies and Ti3+ state in TiO2 thin film and enhanced optical properties by air plasma treatment [J].

Bharti, Bandna ;

Kumar, Santosh ;

Lee, Heung-No ;

Kumar, Rajesh .

SCIENTIFIC REPORTS, 2016, 6

[6]

Chen C.C., 2014, ATLAS J MAT SCI, V1, P1, DOI [10.5147/ajms.v1i1.116, DOI 10.5147/AJMS.V1I1.116]

[7] Micro-Raman and XPS studies of pure ZnO ceramics [J].

Das, J. ;

Pradhan, S. K. ;

Sahu, D. R. ;

Mishra, D. K. ;

Sarangi, S. N. ;

Nayak, B. B. ;

Verma, S. ;

Roul, B. K. .

PHYSICA B-CONDENSED MATTER, 2010, 405 (10) :2492-2497

[8] TiCl4 as a precursor in the TiN deposition by ALD and PEALD [J].

Elers, KE ;

Winkler, J ;

Weeks, K ;

Marcus, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (08) :G589-G593

[9] TiO2 atomic layer deposition on ZrO2 particles using alternating exposures of TiCl4 and H2O [J].

Ferguson, JD ;

Yoder, AR ;

Weimer, AW ;

George, SM .

APPLIED SURFACE SCIENCE, 2004, 226 (04) :393-404

[10] Low-temperature Al2O3 atomic layer deposition [J].

Groner, MD ;

Fabreguette, FH ;

Elam, JW ;

George, SM .

CHEMISTRY OF MATERIALS, 2004, 16 (04) :639-645

← 1 2 3 4 5 →