Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance

被引：14

作者：

Ding, Peng ^{[1
]}

Chen, Chen ^{[1
]}

Ding, Wuchang ^{[1
]}

Yang, Feng ^{[1
]}

Su, Yongbo ^{[1
]}

Wang, Dahai ^{[1
]}

Jin, Zhi ^{[1
]}

机构：

[1] IMECAS, Microwave Devices & Integrated Circuits Dept, Beijing 100029, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2016年 / 123卷

基金：

中国国家自然科学基金;

关键词：

InP-based electron mobility transistor; Threshold voltage shift; Cutoff frequency; f(t); Maximum oscillation frequency; f(max); CHANNEL; KINK;

D O I：

10.1016/j.sse.2016.05.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface passivation in InP-based High Electron Mobility Transistors (HEMTs) plays an important role in reducing or eliminating their surface effects which limit both direct-current (DC) and radio-frequency (RF) performances. In the present work, effect of surface passivation was studied using an ultra-thin 20 nm PECVD Si3N4 layer. In DC performance, after passivation, its maximum transconductance (g(m, MAX)) is increased up to 1200 mS/mm. It is found that, by scaling the thickness of Si3N4 layer, the increase in Cgd after passivation can be effectively limited verified by small-signal modeling. As a result, S-parameter measurements demonstrate an increase in extracted f(max) up to 450 GHz after passivation. The results show that, by using an ultra-thin Si3N4 surface passivation, its RF performance can be improved in InP-based HEMTs. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：1 / 5

页数：5

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