Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band

被引：9

作者：

Orchard, Jonathan R. ^{[1
]}

Woodhead, Chris ^{[2
]}

Wu, Jiang ^{[3
]}

Tang, Mingchu ^{[3
]}

Beanland, Richard ^{[4
]}

Noori, Yasir ^{[2
]}

Liu, Huiyun ^{[3
]}

Young, Robert J. ^{[2
]}

Mowbray, David J. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys, Hicks Bldg,Hounsfield Rd, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[3] UCL, Dept Elect & Elect Engn, Torrington Pl, London WC1E 7JE, England

[4] Univ Warwick, Dept Phys, Gibbet Hill Rd, Coventry CV4 7AL, W Midlands, England

来源：

ACS PHOTONICS | 2017年 / 4卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

single-photon sources; quantum dots; Si substrate; C-band; III-V semiconductors; GaAsSb; WAVELENGTH LIGHT-EMISSION; MU-M; GAASSB; LASERS; LAYERS; INGAAS; DEVICE;

D O I：

10.1021/acsphotonics.7b00276

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530-1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

引用

页码：1740 / 1746

页数：7

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