Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition

被引:22
作者
Seravalli, L. [1 ]
Bosi, M. [1 ]
Fiorenza, P. [2 ]
Panasci, S. E. [2 ]
Orsi, D. [3 ]
Rotunno, E. [4 ]
Cristofolini, L. [3 ]
Rossi, F. [1 ]
Giannazzo, F. [2 ]
Fabbri, F. [5 ]
机构
[1] Inst Mat Elect & Magnetism IMEM CNR, Parco Area Sci 37-A, I-43124 Parma, Italy
[2] Inst Microelect & Microsyst CNR IMM, ZI VIII Str 5, I-95121 Catania, Italy
[3] Univ Parma, Dept Math Phys & Comp Sci, Parco Area Sci 7-A, I-43124 Parma, Italy
[4] CNR, Ist Nanosci, Via G Campi 213-A, I-41125 Modena, Italy
[5] CNR, Ist Nanosci, Scuola Normale Super, NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
来源
NANOSCALE ADVANCES | 2021年 / 3卷 / 16期
关键词
FEW-LAYER MOS2; ATOMIC LAYERS; INTEGRATED-CIRCUITS; GROWTH; TRANSITION; PHOTOLUMINESCENCE; OPTOELECTRONICS; PROMOTER; MONO;
D O I
10.1039/d1na00367d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The use of metal nanoparticles is an established paradigm for the synthesis of semiconducting one-dimensional nanostructures. In this work we study their effect on the synthesis of two-dimensional semiconducting materials, by using gold nanoparticles for chemical vapor deposition growth of two-dimensional molybdenum disulfide (MoS2). In comparison with the standard method, the employment of gold nanoparticles allows us to obtain large monolayer MoS2 flakes, up to 20 mu m in lateral size, even if they are affected by the localized overgrowth of MoS2 bilayer and trilayer islands. Important modifications of the optical and electronic properties of MoS2 triangular domains are reported, where the photoluminescence intensity of the A exciton is strongly quenched and a shift to a positive threshold voltage in back-gated field effect transistors is observed. These results indicate that the use of gold nanoparticles influences the flake growth and properties, indicating a method for possible localized synthesis of two-dimensional materials, improving the lateral size of monolayers and modifying their properties.
引用
收藏
页码:4826 / 4833
页数:8
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