Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers

被引：74

作者：

Tansu, N

Yeh, JY

Mawst, LJ

机构：

[1] Lehigh Univ, Ctr Opt Technol, Dept Elect & Comp Engn, Sinclair Lab, Bethlehem, PA 18015 USA

[2] Univ Wisconsin, Dept Elect & Comp Engn, Reed Ctr Photon, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 13期

关键词：

D O I：

10.1063/1.1613998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very low threshold-current-density InGaAsN quantum-well lasers with GaAsN barriers, grown using metalorganic chemical vapor deposition, have been realized with a room-temperature emission wavelength of 1317 nm. The GaAsN barriers are employed to extend the wavelength, to strain compensate the quantum well, and to improve the hole confinement inside the quantum well. RT threshold current densities of only 210-270 A/cm(2) are measured for InGaAsN quantum-well lasers (L-cav=1000-2000 mum) with an emission wavelength of 1317 nm. (C) 2003 American Institute of Physics.

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页码：2512 / 2514

页数：3

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