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Fabrication and Characterization of Vertically Aligned Long ZnO Nanorods on Transparent Substrate
被引:2
作者:

Kar, Jyoti Prakash
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Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea

Choi, Ji-Hyuk
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Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea

Das, Sachindra Nath
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Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea

Xiong, Junjie
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Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea

Lee, Min-Jung
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Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea

Lee, Tae Ii
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Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea

Myoung, Jae-Min
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Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea
机构:
[1] Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea
关键词:
Zinc Oxide;
Nanorods;
Metal Organic Chemical Vapor Deposition;
Microstructure;
FIELD-EMISSION PROPERTIES;
ZINC-OXIDE NANOWIRES;
GA-DOPED ZNO;
ELECTRICAL-PROPERTIES;
GROWTH;
PHOTODETECTOR;
MANIPULATION;
DEPOSITION;
MORPHOLOGY;
ARRAYS;
D O I:
10.1166/jnn.2011.3538
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Vertically aligned long ZnO nanorods (NRs) were grown by metal organic chemical vapor deposition (MOCVD) technique. Prior to the NRs growth Ga-doped ZnO (GZO) film was deposited by DC sputtering technique on glass substrates. The length and width of the NRs were 25 mu m and 450-500 nm, respectively. Structural and optical properties of the NRs were investigated after the growth. The NRs were single crystalline in nature with the preferred growth along c-axis. The diffusion of Ga atoms in the bottom of the NRs during the growth is detected. A prominent near band edge emission of NRs was observed from room-temperature photoluminescence study. Electrical characteristics across the NRs-thin film hybrid structure were measured with UV exposure, where the rise and fall of the photocurrent was exponential in nature due to the desorption and adsorption of oxygen in the surface.
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页码:2185 / 2190
页数:6
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