Analytical prediction of subsurface microcrack damage depth in diamond wire sawing silicon crystal

Subsurface microcrack damage depth (SSD) in silicon wafer processed by diamond wire sawing has a great influence on the subsequent processing process and fracture strength of silicon wafer. Based on the indentation fracture mechanics, a new numerical model for predicting the SSD of silicon wafer on the basis of half-penny crack system is proposed in this paper. In this model, effect of the random distribution characteristics of size, position and tip half angle of abrasives and different material removal modes to the contour of workpiece cutting groove are all considered. Median cracks and radial cracks are regarded that propagating into one body, that is half-penny crack system. Validity of this model is verified by comparing with experimental results in the literature. From this model, the relationship between SSD and feed rate, wire speed, size of abrasives and density of abrasives on the surface of saw wire is analyzed, the critical speed ratio of feed rate to wire speed that can achieve pure ductile processing is discussed as well. The results show that using the maximum extended length of half-penny crack system as the SSD of silicon wafer is more reasonable than using the maximum extended length of median cracks as the SSD of silicon wafer. As wire speed increases, feed rate decreases, or density of abrasives on the surface of saw wire increases, the SSD will decrease. Keeping other parameters of saw wire unchanged, the size of abrasives has no significant effect on the change of SSD. Keeping the ratio of feed rate to wire speed unchanged, the SSD varies within a small range. When the speed ratio is in the range of 10.43-16, the slice surface tends to be formed by pure ductile removal of material. The results can be used to guide the optimization of diamond wire sawing process.