Analysis of carrier traps in silicon nitride film with discharge current transient spectroscopy, photoluminescence, and electron spin resonance

被引：21

作者：

Aozasa, Hiroshi ^{[1
]}

Fujiwara, Ichiro

Kamigaki, Yoshiaki

机构：

[1] Kagawa Univ, Fac Engn, Dept Adv Mat Sci, Takamatsu, Kagawa 7610396, Japan

[2] Sony Corp, Semicond Business Unit, Semicond Technol Dev Grp, Adv Device R&D Dept, Kanagawa 2430014, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 9A期

关键词：

silicon nitride; DCTS; ESR; photoluminescence; trap; K-center; paramagnetic defect; Pb-center; silicon dangling-bond;

D O I：

10.1143/JJAP.46.5762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical characteristics and an origin of traps in silicon nitride film were investigated using discharge current transient spectroscopy (DCTS), electron spin resonance (ESR), and photoluminescence (PL). It was found from DCTS that the density of traps of 1.1 eV from the conduction band edge increased with the increase of the gas-mixture ratio of SiH2Cl2 over NH3 for the fabrication of silicon nitride film. The energy levels of traps in silicon nitride film of 0.25, 0.68, 0.83-0.91, and 1.25-1.3 eV from the conduction band edge were found from photoluminescence observation. The ESR signals of the K-center that indicated a silicon dangling-bond increased with the increase of the gas-mixture ratio of SiH2Cl2 over NH3. It is suggested that the origin of traps of 1.1 eV from the conduction band in silicon nitride film is the silicon dangling-bond.

引用

页码：5762 / 5766

页数：5

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