Effect of Annealing Temperature on the Performance of SnO2 Thin Film Transistors Prepared by Spray Pyrolysis

被引：8

作者：

Zhang, XinAn ^{[1
]}

Zhai, JunXia ^{[1
]}

Yu, XianKun ^{[1
]}

Zhu, RuiJuan ^{[1
]}

Zhang, WeiFeng ^{[1
]}

机构：

[1] Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2015年 / 15卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Spray Pyrolysis; SnO2; TFT; Annealing Temperature; Electrical Performance;

D O I：

10.1166/jnn.2015.10198

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We fabricated SnO2 thin film transistors on thermally oxidized p-type silicon substrates by low-cost spray pyrolysis. The effect of annealing temperatures on electrical characteristics of SnO2 thin film transistors were investigated. Thermal annealing at higher temperatures induced a negative shift of the threshold voltage (VT) and an increase in the saturation mobility. It was found that the device annealed at 450 degrees C exhibited a good electrical performance with the field-effect mobility of 0.19 cm(2)/Vs, the threshold voltage of 2.5 V, and the on/off current ratio of 10(3).

引用

页码：6183 / 6187

页数：5

共 13 条

[1] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
Chiang, HQ
Wager, JF
Hoffman, RL
Jeong, J
Keszler, DA
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (01) : 013503 - 1
[2] Transparent thin-film transistors with zinc indium oxide channel layer
Dehuff, NL
Kettenring, ES
Hong, D
Chiang, HQ
Wager, JF
Hoffman, RL
Park, CH
Keszler, DA
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)
[3] Passivation of zinc-tin-oxide thin-film transistors
Hong, D
Wager, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (06): : L25 - L27
[4] Effect of the Annealing Ambient on the Electrical Characteristics of the Amorphous InGaZnO Thin Film Transistors
Huang, Yu-Chih
Yang, Po-Yu
Huang, Hau-Yuan
Wang, Shui-Jinn
Cheng, Huang-Chung
[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (07) : 5625 - 5630
[5] Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system
Iwasaki, Tatsuya
Itagaki, Naho
Den, Tohru
Kumomi, Hideya
Nomura, Kenji
Kamiya, Toshio
Hosono, Hideo
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (24)
[6] Zinc tin oxide transistors on flexible substrates
Jackson, W. B.
Herman, G. S.
Hoffman, R. L.
Taussig, C.
Braymen, S.
Jeffery, F.
Hauschildt, J.
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1753 - 1755
[7] Tin oxide thin films deposited by ultrasonic spray pyrolysis
Jadsadapattarakul, D.
Euvananont, C.
Thanachayanont, C.
Nukeaw, J.
Sooknoi, T.
[J]. CERAMICS INTERNATIONAL, 2008, 34 (04) : 1051 - 1054
[8] 1/f noise of SnO2 nanowire transistors
Ju, Sanghyun
Chen, Pochiang
Zhou, Chongwu
Ha, Young-geun
Facchetti, Antonio
Marks, Tobin J.
Kim, Sun Kook
Mohammadi, Saeed
Janes, David B.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (24)
[9] Characteristics of Tin Oxide-Based Thin Film Transistors Prepared by DC Magnetron Sputtering
Moon, Yeon-Keon
Kim, Woong-Sun
Kim, Kyung-Taek
Shin, Se-Young
Park, Jong-Wan
[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (04) : 3341 - 3345
[10] Presley R. E., 2006, SOLID STATE ELECT, V24, P2702

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