pH driven addressing of silicon nanowires onto Si3N4/SiO2 micro-patterned surfaces

被引:41
作者
Cloarec, Jean-Pierre [1 ,2 ,3 ]
Chevalier, Celine [1 ,2 ,3 ,4 ]
Genest, Jonathan [5 ]
Beauvais, Jacques [5 ]
Chamas, Hassan [1 ,2 ]
Chevolot, Yann [1 ,2 ]
Baron, Thierry [4 ]
Souifi, Abdelkader [1 ,2 ,3 ]
机构
[1] Univ Lyon, Inst Nanotechnol Lyon, Site Ecole Cent Lyon & Site INSA, Lyon, France
[2] UCBL, CPE, ECL, INSA Lyon,CNRS,UMR 5270, Lyon, France
[3] Univ Sherbrooke, UJF, ECL, CNRS,INSA Lyon,Lab Nanotechnol & Nanosyst,UMR 346, Pavillon P2-3IT,3000 Blvd Univ, Sherbrooke, PQ J1K 0A5, Canada
[4] CEA Grenoble, CNRS, LETI D2NT, Lab Technol Microelect, 17 Ave Martyrs, F-38054 Grenoble, France
[5] Univ Sherbrooke, Dept Elect & Comp Engn, Sherbrooke, PQ J1K 2R1, Canada
关键词
localization; patterned surfaces; silicon; nanowires; pH; electrostatic forces; DLVO theory; DNA; FORCES; CHARGE; PLACEMENT; INTERFACE; POINTS; FILMS; GLASS;
D O I
10.1088/0957-4484/27/29/295602
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
pH was used as the main driving parameter for specifically immobilizing silicon nanowires onto Si3N4 microsquares at the surface of a SiO2 substrate. Different pH values of the coating aqueous solution enabled to experimentally distribute nanowires between silicon nitride and silicon dioxide: at pH 3 nanowires were mainly anchored on Si3N4; they were evenly distributed between SiO2 and Si3N4 at pH 2.8; and they were mainly anchored on SiO2 at pH 2. A theoretical model based on DLVO theory and surface protonation/deprotonation equilibria was used to study how, in adequate pH conditions, Si nanowires could be anchored onto specific regions of a patterned Si3N4/SiO2 surface. Instead of using capillary forces, or hydrophilic/hydrophobic contrast between the two types of materials, the specificity of immobilization could rely on surface electric charge contrasts between Si3N4 and SiO2. This simple and generic method could be used for addressing a large diversity of nano-objects onto patterned substrates.
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页数:10
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