Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light-induced transient grating technique

被引：23

作者：

Malinauskas, T. ^{[1
]}

Jarasiunas, K. ^{[1
]}

Ivakin, E. ^{[2
]}

Tranchant, N. ^{[3
]}

Nesladek, M. ^{[3
,4
]}

机构：

[1] Vilnius Univ, Inst Appl Res, LT-10222 Vilnius, Lithuania

[2] Natl Acad Sci, Inst Phys, Minsk 220072, BELARUS

[3] CEA, LIST, Diamond Sensors Lab, F-91191 Gif Sur Yvette, France

[4] Hasselt Univ, Inst Mat Res, IMOMEC Div IMEC, B-3590 Diepenbeek, Belgium

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 09期

关键词：

carrier diffusion; diamond; LITG; recombination; RECOMBINATION RADIATION; SCATTERING; TRANSPORT; DYNAMICS; MOBILITY; SILICON; GAAS;

D O I：

10.1002/pssa.201000100

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a contactless, all-optical study of carrier diffusion and recombination kinetics in single-crystalline diamond layers using the light-induced transient grating (LITG) technique. Decay times of transient diffraction grating yielded carrier lifetime of tau(R) approximate to 3 ns and bipolar diffusion coefficient D-a = 12 cm(2)/s at 300 K. The latter value of D-a was found to be 4-5 times lower than the ambipolar diffusivity based on electron and hole mobilities, measured by photo-electrical time-of-flight (ToF) technique. This discrepancy was attributed to the bandgap renormalization at high excess carrier densities and its impact on carrier diffusion. The significant decrease of low temperature diffusivity pointed out to a contribution of many-body effects which are tentatively attributed to the formation of electron-hole liquid (EHL) at T < 150 K. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2058 / 2063

页数：6

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