Coexistent compressive and tensile strain in Ag thin films on Si(111)-(7 x 7) surfaces

被引：7
作者：
Goswami, D. K.
Bhattacharjee, K.
Satpati, B.
Roy, S.
Kuri, G.
Satyam, P. V.
Dev, B. N.
机构：
[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, W Bengal, India
[2] Inst Phys, Bhubaneswar 751005, Orissa, India
[3] DESY, Hamburger Synchrotronstrahlungslabor HASYLAB, D-22607 Hamburg, Germany
来源：
APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 23期
关键词：
Ag films on Si; coexistent compressive and tensile strains; Si(111)-(7 x 7) surface; high resolution X-ray diffraction; EPITAXIAL-GROWTH; LOW-TEMPERATURE; AG/SI(100); ISLANDS; MODES; LAYER;
D O I：
10.1016/j.apsusc.2007.05.051
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Growth and strain behavior of thin Ag films on Si substrates have been investigated by scanning tunneling microscopy, cross-sectional transmission electron microscopy and high resolution X-ray diffraction studies. Ag islands formed on Si at room temperature growth show strongly preferred heights and flat top. At low coverage [ greater than or similar to 1 monolayer (ML)], Ag islands with (I 1 1) orientation containing two atomic layers of Ag are overwhelmingly formed [D.K. Goswami, K. Bhattacharjee, B. Satpati, S. Roy, P.V. Satyam, B.N. Dev, Surf. Sci. 601 (2007) 603]. A thicker (40 ML) annealed film shows two closely spaced Ag(l 1 1) diffraction peaks-one weak and broad and the other narrow and more intense. The broad peak corresponds to an average expansion (0.21%)and the narrow intense peak corresponds to a contraction (0.17%) of the Ag(I I I)planar spacing compared to the bulk value. This coexistence of compressive and tensile strain can be explained in terms of changes in the Ag lattice during the heating-cooling cycle due to thermal expansion coefficient mismatch between Ag and Si. (c) 2007 Elsevier B.V. All rights reserved.
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页码：9142 / 9147
页数：6
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