Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus

被引:239
作者
Ryder, Christopher R. [1 ]
Wood, Joshua D. [1 ]
Wells, Spencer A. [1 ]
Hersam, Mark C. [1 ,2 ,3 ,4 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
[3] Northwestern Univ, Dept Med, Evanston, IL 60208 USA
[4] Northwestern Univ, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
chemistry; noncovalent; covalent; electronics; optoelectronics; anisotropy; excitons; contacts; ELECTRONIC TRANSPORT-PROPERTIES; SINGLE-LAYER MOS2; TUNABLE BAND-GAP; MOLYBDENUM-DISULFIDE; ELECTRICAL-PROPERTIES; GRAIN-BOUNDARIES; VAPOR-DEPOSITION; LARGE-AREA; PHOTOLUMINESCENCE ENHANCEMENT; THERMAL-CONDUCTIVITY;
D O I
10.1021/acsnano.6b01091
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and extrinsic adsorbates. Furthermore, the integration of 2D semiconductors into electronic and optoelectronic devices introduces unique challenges at metal semiconductor and dielectric semiconductor interfaces. Here, we review emerging efforts to understand and exploit chemical effects to influence the properties of 2D TMDCs and BP. In some cases, surface chemistry leads to significant degradation, thus necessitating the development of robust passivation schemes. On the other hand, appropriately designed chemical modification can be used to beneficially tailor electronic properties, such as controlling doping levels and charge carrier concentrations. Overall, chemical methods allow substantial tunability of the properties of 2D TMDCs and BP, thereby enabling significant future opportunities to optimize performance for device applications.
引用
收藏
页码:3900 / 3917
页数:18
相关论文
共 234 条
[1]   Black Phosphorus Gas Sensors [J].
Abbas, Ahmad N. ;
Liu, Bilu ;
Chen, Liang ;
Ma, Yuqiang ;
Cong, Sen ;
Aroonyadet, Noppadol ;
Koepf, Marianne ;
Nilges, Tom ;
Zhou, Chongwu .
ACS NANO, 2015, 9 (05) :5618-5624
[2]   Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-Type SnS2 and Orthorhombic p-Type SnS Crystals [J].
Ahn, Ji-Hoon ;
Lee, Myoung-Jae ;
Heo, Hoseok ;
Sung, Ji Ho ;
Kim, Kyungwook ;
Hwang, Hyein ;
Jo, Moon-Ho .
NANO LETTERS, 2015, 15 (06) :3703-3708
[3]   ELECTRICAL-PROPERTIES OF BLACK PHOSPHORUS SINGLE-CRYSTALS [J].
AKAHAMA, Y ;
ENDO, S ;
NARITA, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1983, 52 (06) :2148-2155
[4]   Near-unity photoluminescence quantum yield in MoS2 [J].
Amani, Matin ;
Lien, Der-Hsien ;
Kiriya, Daisuke ;
Xiao, Jun ;
Azcatl, Angelica ;
Noh, Jiyoung ;
Madhvapathy, Surabhi R. ;
Addou, Rafik ;
Santosh, K. C. ;
Dubey, Madan ;
Cho, Kyeongjae ;
Wallace, Robert M. ;
Lee, Si-Chen ;
He, Jr-Hau ;
Ager, Joel W., III ;
Zhang, Xiang ;
Yablonovitch, Eli ;
Javey, Ali .
SCIENCE, 2015, 350 (6264) :1065-1068
[5]   Low Temperature Solution-Phase Deposition of SnS Thin Films [J].
Antunez, Priscilla D. ;
Torelli, Daniel A. ;
Yang, Fan ;
Rabuffetti, Federico A. ;
Lewis, Nathan S. ;
Brutchey, Richard L. .
CHEMISTRY OF MATERIALS, 2014, 26 (19) :5444-5446
[6]   Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors [J].
Avsar, Ahmet ;
Vera-Marun, Ivan J. ;
Tan, Jun You ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Castro Neto, Antonio H. ;
Oezyilmaz, Barbaros .
ACS NANO, 2015, 9 (04) :4138-4145
[7]   Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide [J].
Azizi, Amin ;
Zou, Xiaolong ;
Ercius, Peter ;
Zhang, Zhuhua ;
Elias, Ana Laura ;
Perea-Lopez, Nestor ;
Stone, Greg ;
Terrones, Mauricio ;
Yakobson, Boris I. ;
Alem, Nasim .
NATURE COMMUNICATIONS, 2014, 5
[8]   Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2 [J].
Baugher, Britton W. H. ;
Churchill, Hugh O. H. ;
Yang, Yafang ;
Jarillo-Herrero, Pablo .
NANO LETTERS, 2013, 13 (09) :4212-4216
[9]   Chemical modifications and stability of phosphorene with impurities: a first principles study [J].
Boukhvalov, D. W. ;
Rudenko, A. N. ;
Prishchenko, D. A. ;
Mazurenko, V. G. ;
Katsnelson, M. I. .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (23) :15209-15217
[10]   Squeezing lone pairs: The A17 to A7 pressure-induced phase transition in black phosphorus [J].
Boulfelfel, Salah Eddine ;
Seifert, Gotthard ;
Grin, Yuri ;
Leoni, Stefano .
PHYSICAL REVIEW B, 2012, 85 (01)