Fabrication and application of a full wafer size micro/nanostencil for multiple length-scale surface patterning

被引:77
作者
Kim, GM [1 ]
van den Boogaart, MAF [1 ]
Brugger, J [1 ]
机构
[1] Swiss Fed Inst Technol, Inst Microelect & Microsyst, Microsyst Lab, CH-1015 Lausanne, Switzerland
关键词
nanostencil; shadow mask deposition; nanoengineering; focused ion beam milling; MEMS technology;
D O I
10.1016/S0167-9317(03)00121-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A tool and method for flexible and rapid surface patterning technique beyond lithography based on high-resolution shadow mask method, or nanostencil, is presented. This new type of miniaturized shadow mask is fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. Thereby apertures in a 100-500 nm thick low-stress silicon nitride membrane in the size range from < 100 nm to > 100 mum were made. The stencil device is mechanically fixed on the surface and used as miniature shadow mask during deposition of metal layers. Using this method, aluminum micro- and nanostructures as small as 100 nm in width were patterned. The deposited micro- and nano-scale structures were used as etch mask and transferred into a sub-layer (in our case silicon nitride) by dry plasma etching. High-resolution shadow masking can be used to create micro/nanoscale patterns on arbitrary substrates including mechanically fragile or chemically active surfaces. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:609 / 614
页数:6
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