InAs quantum dots in GaAs holes: island number dependence on hole diameter and conduction-band coupling estimates

被引：12

作者：

Jeppesen, S ^{[1
]}

Miller, MS ^{[1
]}

Kowalski, B ^{[1
]}

Maximov, I ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, Dept Solid State Phys, S-22100 Lund, Sweden

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 06期

关键词：

quantum dots; InAs islands; electron-beam lithography; GaAs substrate;

D O I：

10.1006/spmi.1996.0428

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We studied the formation of InAs islands in holes defined by electron-beam lithography on GaAs substrates. The islands grew selectively in the holes, with one to nine islands per hole. The number of islands depends simply on the hole diameter, filling the holes at a constant effective two-dimensional density. We define the ratio of this effective density to the density on an unpatterned control sample to be the selectivity ratio, and we find a selectivity ratio of greater than 1000 for the present samples. We estimated the lateral conduction-band coupling for closely spaced islands and conclude them to be plausible candidates for weakly coupled device building blocks. (C) 1998 Academic Press Limited.

引用

页码：1347 / 1352

页数：6

共 21 条

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