Photomodulation spectroscopy applied to low-dimensional semiconductor structures

被引：2

作者：

Misiewicz, J

Sek, G

Kudrawiec, R

Ryczko, K

Gollub, D

Reithmaier, JP

Forchel, A

机构：

[1] Wroclaw Tech Univ, Inst Phys, PL-50370 Wroclaw, Poland

[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期

关键词：

photomodulation; quantum wells; quantum dots;

D O I：

10.1016/S0026-2692(03)00024-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present here few examples of application of photomodulation techniques, e.g. photoreflectance and phototransmittance, as excellent methods for the investigation of semiconductor device structures. The discussion is narrowed down to low-dimensional structures used as an active part of the infrared optoelectronic devices: from new material (GaInAsN) double quantum wells, good candidate for 1.3 and 1.55 mum telecommunication lasers, through InGaSb/GaSb quantum wells pretending to the application in the infrared gas sensors, to 980 run InGaAs/GaAs quantum dot laser pump source for EDFA amplifiers. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：351 / 353

页数：3