ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

被引：238

作者：

Matsubara, K ^{[1
]}

Fons, P ^{[1
]}

Iwata, K ^{[1
]}

Yamada, A ^{[1
]}

Sakurai, K ^{[1
]}

Tampo, H ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

THIN SOLID FILMS | 2003年 / 431卷

关键词：

zinc oxide; solar cells; pulsed laser deposition; transparent conducting oxide;

D O I：

10.1016/S0040-6090(03)00243-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low resistivity and highly transparent ZnO conducting films for thin film solar cell applications were fabricated at low temperature by pulsed laser deposition. Al-, B- and Ga-doped ZnO films were deposited on Coming 7059 glass substrate at a substrate temperature of 200 degreesC. The Al-doped ZnO films were found to have the lowest resistivity of 2.5 X 10(-4) Omega cm and an average optical transmission of 91% for wavelengths between 400 and 1100 nm. The values of the Ga-doped film were 2.5 X 10(-4) Omega cm and 81%, respectively. Owing to the higher optical transmission in the near infrared region, the photovoltaic cell performance of a Cu(In,Ga)Se-2 thin film solar cell with an Al-doped ZnO window outperformed a cell fabricated with a Ga-doped ZnO window. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：369 / 372

页数：4

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