Study of degradation mechanism of blue light emitting diodes

被引：49
作者：
Uddin, A
Wei, AC
Andersson, TG
机构：
[1] Technol Univ, Sch Mat Sci & Engn, Singapore, Singapore
[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源：
THIN SOLID FILMS | 2005年 / 483卷 / 1-2期
关键词：
light emitting diode; reliability; aging mechanism; semiconductor;
D O I：
10.1016/j.tsf.2005.01.018
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied the degradation mechanism of GaN base blue light emitting diodes by the current-voltage and light current characteristics driving high currents through the diodes for various times. This was a result of an increased non-radiative recombination in the active region. The aging effects were not observed at the high bias region due to the saturation of non-radiative recombination centres. The mechanism of the increased non-radiative recombination centres may be related with the generation of defects in the active region due to the high current flow through quantum well structure and the increase of light emitting diode chip temperature. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：378 / 381
页数：4
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