Uniformly doped InAs/GaAs quantum-dot infrared photodetector structures

被引：6
|
作者：
Pal, D [1 ]
Towe, E [1 ]
机构：
[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Lab Photon, Pittsburgh, PA 15213 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 03期
关键词：
D O I：
10.1116/1.1881572
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied InAs/GaAs quantum-dot photodetector devices that are sensitive to normal incidence radiation. Photoluminescence measurements indicate that there are three bound states within the conduction band of the quantum dots. The detector structures were uniformly doped to supply approximately 9 electrons per dot. The peak of the photoresponse spectrum is observed at about 5.12 mu m. In general the characteristics of our devices are similar to those where the dopant impurities are placed within the wetting layer or just below the quantum dots. (c) 2005 American Vacuum Society.
引用
收藏
页码：1132 / 1135
页数：4
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