Uniformly doped InAs/GaAs quantum-dot infrared photodetector structures

被引：6
|
作者：
Pal, D [1 ]
Towe, E [1 ]
机构：
[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Lab Photon, Pittsburgh, PA 15213 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 03期
关键词：
D O I：
10.1116/1.1881572
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied InAs/GaAs quantum-dot photodetector devices that are sensitive to normal incidence radiation. Photoluminescence measurements indicate that there are three bound states within the conduction band of the quantum dots. The detector structures were uniformly doped to supply approximately 9 electrons per dot. The peak of the photoresponse spectrum is observed at about 5.12 mu m. In general the characteristics of our devices are similar to those where the dopant impurities are placed within the wetting layer or just below the quantum dots. (c) 2005 American Vacuum Society.
引用
收藏
页码：1132 / 1135
页数：4
相关论文
共 50 条
  • [21] Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector
    Stiff, AD
    Krishna, S
    Bhattacharya, P
    Kennerly, SW
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (11) : 1412 - 1419
  • [22] Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors
    Lin, S.-Y., 1600, Japan Society of Applied Physics (43):
  • [23] Single-Period InAs-GaAs Quantum-Dot Infrared Photodetectors
    Chou, Shu-Ting
    Lin, Shih-Yen
    Tseng, Chi-Che
    Chen, Yi-Hao
    Chen, Cheng-Nan
    Wu, Meng-Chyi
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (17-20) : 1575 - 1577
  • [24] Effect of silicon dopant on the performance of InAs/GaAs quantum-dot infrared photodetectors
    Lin, SY
    Tsai, YJ
    Lee, SC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2004, 43 (2A): : L167 - L169
  • [25] InAs/GaAs quantum-dot infrared photodetectors grown by molecular beam epitaxy
    Pal, D.
    Walker, J.
    Towe, E.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1532 - 1535
  • [26] Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector
    Huang, Chun-Yuan
    Ou, Tzu-Min
    Chou, Shu-Ting
    Tsai, Cheng-Shuan
    Wu, Meng-Chyi
    Lin, Shih-Yen
    Chi, Jim-Yong
    Hsu, Bang-Yu
    Chi, C. C.
    THIN SOLID FILMS, 2007, 515 (10) : 4459 - 4461
  • [27] Vertical coupling and transition energies in multilayer InAs/GaAs quantum-dot structures
    Taddei, S
    Colocci, M
    Vinattieri, A
    Bogani, F
    Franchi, S
    Frigeri, P
    Lazzarini, L
    Salviati, G
    PHYSICAL REVIEW B, 2000, 62 (15): : 10220 - 10225
  • [28] InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency
    Lao, Yan-Feng
    Wolde, Seyoum
    Perera, A. G. Unil
    Zhang, Y. H.
    Wang, T. M.
    Liu, H. C.
    Kim, J. O.
    Schuler-Sandy, Ted
    Tian, Zhao-Bing
    Krishna, S. S.
    APPLIED PHYSICS LETTERS, 2013, 103 (24)
  • [29] Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector
    Ma, W. Q.
    Yang, X. J.
    Chong, M.
    Yang, T.
    Chen, L. H.
    Shao, J.
    Lue, X.
    Lu, W.
    Song, C. Y.
    Uo, H. C.
    APPLIED PHYSICS LETTERS, 2008, 93 (01)
  • [30] High-response i-InAs/n-GaAs quantum-dot infrared photodetector with no current blocking barrier
    Lee, SJ
    Noh, SK
    Choe, JW
    Lee, UH
    Hong, SC
    Lee, JI
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (03): : 1218 - 1220
12345