Gate-Controlled Schottky Heterojunctions Photodetector Based on Graphene-Silicon-Graphene

被引：0

作者：

Qian, Fengsong ^{[1
]}

Hu, Liangchen ^{[1
]}

Wang, Qiuhua ^{[1
]}

Sun, Jie ^{[2
]}

Xie, Yiyang ^{[1
]}

Xu, Chen ^{[1
]}

机构：

[1] Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China

[2] Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China

来源：

2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2021年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a graphene-silicon-graphene-based photodetector with two opposite Schottky heterojunctions. Through the tuning of gate voltage, the device can obtain high photoconductivity gain and achieve excellent optical detection performance. (C) 2021 The Author(s)

引用

页数：2

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