Ultrafine pattern x-ray mask fabricated using the sidewall method

被引：0

作者：

Xia, AD ^{[1
]}

Fu, SJ ^{[1
]}

Hong, YL ^{[1
]}

Tian, YC ^{[1
]}

Hu, YG ^{[1
]}

Zhang, XY ^{[1
]}

Lu, J ^{[1
]}

Li, FQ ^{[1
]}

机构：

[1] UNIV SCI & TECHNOL CHINA,STRUCT RES LAB,HEFEI 230026,PEOPLES R CHINA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 05期

关键词：

D O I：

10.1116/1.588540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 50 nm line x-ray mask was fabricated by using a sidewall process. The gold film which was taken as an absorber was deposited by ion-beam sputtering onto the very vertical sidewall surfaces of a polyimide grating. It was demonstrated that the smoothness and the small sidewall angle play an important role in the fabrication of the higher resolution x-ray mask using sidewall methods. (C) 1996 American Vacuum Society.

引用

页码：3391 / 3392

页数：2

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