Detection of nanotesla AC magnetic fields using steady-state SIRS and ultra-low field MRI
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作者:
Sveinsson, Bragi
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Massachusetts Gen Hosp, AA Martinos Ctr Biomed Imaging, Boston, MA 02114 USA
Harvard Med Sch, Dept Radiol, Boston, MA 02115 USAMassachusetts Gen Hosp, AA Martinos Ctr Biomed Imaging, Boston, MA 02114 USA
Sveinsson, Bragi
[1
,2
]
Koonjoo, Neha
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Massachusetts Gen Hosp, AA Martinos Ctr Biomed Imaging, Boston, MA 02114 USA
Harvard Med Sch, Dept Radiol, Boston, MA 02115 USAMassachusetts Gen Hosp, AA Martinos Ctr Biomed Imaging, Boston, MA 02114 USA
Koonjoo, Neha
[1
,2
]
Zhu, Bo
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Massachusetts Gen Hosp, AA Martinos Ctr Biomed Imaging, Boston, MA 02114 USA
Harvard Med Sch, Dept Radiol, Boston, MA 02115 USA
Harvard Univ, Dept Phys, Cambridge, MA 02138 USAMassachusetts Gen Hosp, AA Martinos Ctr Biomed Imaging, Boston, MA 02114 USA
Zhu, Bo
[1
,2
,3
]
Witzel, Thomas
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Massachusetts Gen Hosp, AA Martinos Ctr Biomed Imaging, Boston, MA 02114 USA
Harvard Med Sch, Dept Radiol, Boston, MA 02115 USAMassachusetts Gen Hosp, AA Martinos Ctr Biomed Imaging, Boston, MA 02114 USA
Witzel, Thomas
[1
,2
]
Rosen, Matthew S.
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Massachusetts Gen Hosp, AA Martinos Ctr Biomed Imaging, Boston, MA 02114 USA
Harvard Med Sch, Dept Radiol, Boston, MA 02115 USA
Harvard Univ, Dept Phys, Cambridge, MA 02138 USAMassachusetts Gen Hosp, AA Martinos Ctr Biomed Imaging, Boston, MA 02114 USA
Rosen, Matthew S.
[1
,2
,3
]
机构:
[1] Massachusetts Gen Hosp, AA Martinos Ctr Biomed Imaging, Boston, MA 02114 USA
[2] Harvard Med Sch, Dept Radiol, Boston, MA 02115 USA
[3] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
Objective. Functional magnetic resonance imaging (fMRI) is commonly used to measure brain activity through the blood oxygen level dependent (BOLD) signal mechanism, but this only provides an indirect proxy signal to neuronal activity. Magnetoencephalography (MEG) provides a more direct measurement of the magnetic fields created by neuronal currents in the brain, but requires very specialized hardware and only measures these fields at the scalp. Recently, progress has been made to directly detect neuronal fields with MRI using the stimulus-induced rotary saturation (SIRS) effect, but interference from the BOLD response complicates such measurements. Here, we describe an approach to detect nanotesla-level, low-frequency alternating magnetic fields with an ultra-low field (ULF) MRI scanner, unaffected by the BOLD signal. Approach. A steady-state implementation of the stimulus-induced rotary saturation (SIRS) method is developed. The method is designed to generate a strong signal at ultra-low magnetic field as well as allowing for efficient signal averaging, giving a high contrast-to-noise ratio (CNR). The method is tested in computer simulations and in phantom scans. Main results. The simulations and phantom scans demonstrated the ability of the method to measure magnetic fields at different frequencies at ULF with a stronger contrast than non-steady-state approaches. Furthermore, the rapid imaging functionality of the method reduced noise efficiently. The results demonstrated sufficient CNR down to 7 nT, but the sensitivity will depend on the imaging parameters. Significance. A steady-state SIRS method is able to detect low-frequency alternating magnetic fields at ultra-low main magnetic field strengths with a large signal response and contrast-to-noise, presenting an important step in sensing biological fields with ULF MRI.
机构:
Aberdeen Royal Infirm, Breast Unit, Aberdeen, Scotland
Univ Aberdeen, Sch Med Med Sci & Nutr, Aberdeen, ScotlandUniv Aberdeen, Aberdeen Biomed Imaging Ctr, Aberdeen, Scotland
机构:
Korea Res Inst Stand & Sci, Ctr Brain & Cognit Measurement, Taejon 350340, South KoreaKorea Res Inst Stand & Sci, Ctr Brain & Cognit Measurement, Taejon 350340, South Korea
Shim, Jeong Hyun
Lee, Seong-Joo
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Korea Res Inst Stand & Sci, Ctr Brain & Cognit Measurement, Taejon 350340, South KoreaKorea Res Inst Stand & Sci, Ctr Brain & Cognit Measurement, Taejon 350340, South Korea
Lee, Seong-Joo
Yu, Kwon-Kyu
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Korea Res Inst Stand & Sci, Ctr Brain & Cognit Measurement, Taejon 350340, South KoreaKorea Res Inst Stand & Sci, Ctr Brain & Cognit Measurement, Taejon 350340, South Korea
Yu, Kwon-Kyu
Hwang, Seong-Min
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Korea Res Inst Stand & Sci, Ctr Brain & Cognit Measurement, Taejon 350340, South KoreaKorea Res Inst Stand & Sci, Ctr Brain & Cognit Measurement, Taejon 350340, South Korea
Hwang, Seong-Min
Kim, Kiwoong
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Korea Res Inst Stand & Sci, Ctr Brain & Cognit Measurement, Taejon 350340, South KoreaKorea Res Inst Stand & Sci, Ctr Brain & Cognit Measurement, Taejon 350340, South Korea
机构:
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Dong, Hui
Qiu, Longqing
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Qiu, Longqing
Shi, Wen
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Shi, Wen
Chang, Baolin
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Chang, Baolin
Qiu, Yang
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Qiu, Yang
Xu, Lu
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Xu, Lu
Liu, Chao
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Forschungszentrum Julich FZJ, Peter Grunberg Inst PGI 8, D-52425 Julich, GermanyChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Liu, Chao
Zhang, Yi
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Forschungszentrum Julich FZJ, Peter Grunberg Inst PGI 8, D-52425 Julich, GermanyChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Zhang, Yi
Krause, Hans-Joachim
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Forschungszentrum Julich FZJ, Peter Grunberg Inst PGI 8, D-52425 Julich, GermanyChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Krause, Hans-Joachim
Offenhaeusser, Andreas
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Forschungszentrum Julich FZJ, Peter Grunberg Inst PGI 8, D-52425 Julich, GermanyChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Offenhaeusser, Andreas
Xie, Xiaoming
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China