Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy

被引：98

作者：

Gacevic, Zarko ^{[1
]}

Gomez Sanchez, Daniel ^{[1
]}

Calleja, Enrique ^{[1
]}

机构：

[1] Univ Politecn Madrid, ISOM ETSIT, E-28040 Madrid, Spain

来源：

NANO LETTERS | 2015年 / 15卷 / 02期

关键词：

GaN nanowires; molecular beam epitaxy; selective area growth; formation mechanism; morphological evolution; MOLECULAR-BEAM EPITAXY; NANOSTRUCTURES; TEMPERATURE; NANOCOLUMNS; SUBSTRATE; WIRES;

D O I：

10.1021/nl504099s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This work provides experimental evidence and theoretical explanations regarding the formation mechanisms of GaN nanowires grown by selective area growth on GaN-on-sapphire templates. The first growth stage, driven by selective area growth kinetics, consists of initial nucleation (along the nanohole inner periphery), coalescence onset and full coalescence, producing a single nanocrystal within each nanohole. In the second growth stage, driven by free-surface-energy minimization, the formed nanocrystal undergoes morphological evolution, exhibiting initial cylindrical-like shape, intermediate dodecagonal shape and a final, thermodynamically stable hexagonal shape. From this point on, the nanowire vertical growth proceeds while keeping the stable hexagonal form.

引用

页码：1117 / 1121

页数：5

共 26 条

[1] Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies [J].

Albert, S. ;

Bengoechea-Encabo, A. ;

Lefebvre, P. ;

Barbagini, F. ;

Sanchez-Garcia, M. A. ;

Calleja, E. ;

Jahn, U. ;

Trampert, A. .

APPLIED PHYSICS LETTERS, 2012, 100 (23)

[2] Self-assembled GaN quantum wires on GaN/AlN nanowire templates [J].

Arbiol, Jordi ;

Magen, Cesar ;

Becker, Pascal ;

Jacopin, Gwenole ;

Chernikov, Alexey ;

Schaefer, Soeren ;

Furtmayr, Florian ;

Tchernycheva, Maria ;

Rigutti, Lorenzo ;

Teubert, Joerg ;

Chatterjee, Sangam ;

Morante, Joan R. ;

Eickhoff, Martin .

NANOSCALE, 2012, 4 (23) :7517-7524

[3] Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography [J].

Bengoechea-Encabo, A. ;

Albert, S. ;

Sanchez-Garcia, M. A. ;

Lopez, L. L. ;

Estrade, S. ;

Rebled, J. M. ;

Peiro, F. ;

Nataf, G. ;

de Merry, P. ;

Zuniga-Perez, J. ;

Calleja, E. .

JOURNAL OF CRYSTAL GROWTH, 2012, 353 (01) :1-4

[4] Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks [J].

Bengoechea-Encabo, A. ;

Barbagini, F. ;

Fernandez-Garrido, S. ;

Grandal, J. ;

Ristic, J. ;

Sanchez-Garcia, M. A. ;

Calleja, E. ;

Jahn, U. ;

Luna, E. ;

Trampert, A. .

JOURNAL OF CRYSTAL GROWTH, 2011, 325 (01) :89-92

[5]

Chernysheva E., UNPUB

[6] Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer [J].

Consonni, V. ;

Hanke, M. ;

Knelangen, M. ;

Geelhaar, L. ;

Trampert, A. ;

Riechert, H. .

PHYSICAL REVIEW B, 2011, 83 (03)

[7] Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius [J].

Consonni, V. ;

Knelangen, M. ;

Geelhaar, L. ;

Trampert, A. ;

Riechert, H. .

PHYSICAL REVIEW B, 2010, 81 (08)

[8] Blue single photon emission up to 200K from an InGaN quantum dot in AlGaN nanowire [J].

Deshpande, Saniya ;

Das, Ayan ;

Bhattacharya, Pallab .

APPLIED PHYSICS LETTERS, 2013, 102 (16)

[9] Absolute surface energies of polar and nonpolar planes of GaN [J].

Dreyer, C. E. ;

Janotti, A. ;

Van de Walle, C. G. .

PHYSICAL REVIEW B, 2014, 89 (08)

[10] Crystallographically uniform arrays of ordered (In)GaN nanocolumns [J].

Gacevic, Z. ;

Bengoechea-Encabo, A. ;

Albert, S. ;

Torres-Pardo, A. ;

Gonzalez-Calbet, J. M. ;

Calleja, E. .

JOURNAL OF APPLIED PHYSICS, 2015, 117 (03)

← 1 2 3 →