Near-field and far-field thermography in characterisation of microsystems

被引：0

作者：

Szeloch, RF ^{[1
]}

Gotszalk, TP ^{[1
]}

Radojewski, J ^{[1
]}

Janus, P ^{[1
]}

Pedrak, R ^{[1
]}

Orawski, W ^{[1
]}

机构：

[1] Wroclaw Tech Univ, Inst Microsyst Technol, Wroclaw, Poland

来源：

MICRO MATERIALS, PROCEEDINGS | 2000年

关键词：

microsysem; near-field thermography; far-field thermography;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe results of several experiments with application of the Atomic Force Microscopy (AFM) combining with high resolution Far-Field Thermographic system. Those experiments were performed to determine the influence of thermal effect of electrical field and/or electrical current on the topography of the Si and other microsystems structures. The main purpose of those experiments is mapping of the local temperature with AFM resolution less then thermal wavelength.

引用

页码：1257 / 1259

页数：3