Measurement and analyse of thermal property on high power GaAs/AlGaAs semiconductor laser diodes by electrical method

被引：0

作者：

Zhang, JJ ^{[1
]}

Xin, DS ^{[1
]}

Wang, Y ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China

来源：

ISTM/2003: 5TH INTERNATIONAL SYMPOSIUM ON TEST AND MEASUREMENT, VOLS 1-6, CONFERENCE PROCEEDINGS | 2003年

关键词：

high power GaAs/AlGaAs semiconductor laser diodes; electrical method; instantaneous thermal resistance;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The property of high power GaAs/AlGaAs semiconductor laser diodes PN junction voltage variety with the temperature has been measured and analysed. By measuring the temperature of high power GaAs/AIGaAs semiconductor laser diodes and calculating it, we draw the instantaneous thermal resistance. Finally, by considering the electrical method instantaneous thermal resistance as the index of measurement and analyse, we sift the high power GaAs/AlGaAs semiconductor laser diodes before capping.

引用

页码：2109 / 2110

页数：2