Diffraction anomalous fine-structure study of strained Ga1-xInxAs on GaAs(001)

被引：21

作者：

Woicik, JC ^{[1
]}

Cross, JO

Bouldin, CE

Ravel, B

Pellegrino, JG

Steiner, B

Bompadre, SG

Sorensen, LB

Miyano, KE

Kirkland, JP

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] Univ Washington, Dept Phys, Seattle, WA 98195 USA

[4] CUNY Brooklyn Coll, Dept Phys, Brooklyn, NY 11210 USA

[5] SFA Inc, Largo, MD 20774 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.58.R4215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diffraction anomalous fine-structure measurements performed at both the Ga and As K edges have determined the Ga-As bond length to be 2.442+/-0.005 Angstrom in a buried, 213-Angstrom-thick Ga0.785In0.215As layer grown coherently on GaAs(001). This bond length corresponds to a strain-induced contraction of 0.013+/-0.005 Angstrom relative to the Ga-As bond length in bulk Ga1-xInxAs of the same composition. Together with recent extended x-ray-absorption fine-structure measurements performed at the In K edge [Woicik et al., Phys. Rev. Lett. 79, 5026 (1997)], excellent agreement is found with the uniform bond-length distortion model for strained-layer semiconductors on (001) substrates.

引用

收藏

页码：R4215 / R4218

页数：4

相关论文

共 50 条

[41] Structural, mechanical, and vibrational properties of Ga1-xInxAs alloys:: A molecular dynamics study [J].

Branicio, PS ;

Kalia, RK ;

Nakano, A ;

Rino, JP ;

Shimojo, F ;

Vashishta, P .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1057-1059

[42] THEORETICAL LINEWIDTH ENHANCEMENT FACTOR ALPHA OF GA1-XINXAS/GAINASP/INP STRAINED-QUANTUM-WELL STRUCTURES [J].

HUANG, YD ;

ARAI, S ;

KOMORI, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (02) :142-145

[43] A DIFFRACTION ANOMALOUS FINE-STRUCTURE (DAFS) STUDY OF IR(100)/FE SUPERLATTICES [J].

RENEVIER, H ;

WEIGELT, J ;

ANDRIEU, S ;

FRAHM, R ;

RAOUX, D .

PHYSICA B, 1995, 208 (1-4) :217-219

[44] DETERMINATION OF STATIC BOND CHARGE PROPERTIES IN GA1-XINXAS AND GAAS1-YPY SOLID-SOLUTIONS [J].

PIETSCH, U .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 107 (01) :185-194

[45] Co-refinement of diffraction anomalous fine-structure data [J].

Newville, M ;

Cross, JO ;

Ravel, B ;

Sorensen, LB ;

Bouldin, CE ;

Yacoby, Y .

JOURNAL DE PHYSIQUE IV, 1997, 7 (C2) :759-760

[46] PRESSURE-INDUCED RESONANCE RAMAN-SCATTERING IN GA1-XINXAS/GA1-YALYAS STRAINED QUANTUM-WELL STRUCTURES [J].

KOUROUKLIS, GA ;

JAYARAMAN, A ;

PEOPLE, R ;

SPUTZ, SK ;

MAINES, RG ;

SIVCO, DL ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (10) :6438-6444

[47] A PHOTOLUMINESCENCE STUDY OF GA1-XINXAS/AL1-YINYAS QUANTUM WELLS GROWN BY MBE [J].

DAVEY, ST ;

SCOTT, EG ;

WAKEFIELD, B ;

DAVIES, GJ .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (04) :365-371

[48] PLASMA ANODIZATION OF GA1-XINXAS (X=0.35 AND 0.10) AND STUDY OF MOS INTERFACE PROPERTIES [J].

GOURRIER, S ;

CHANE, JP .

ELECTRONICS LETTERS, 1982, 18 (04) :156-157

[49] Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1-xInxAs/GaAs quantum wells [J].

Titantah, J. T. ;

Lamoen, D. ;

Schowalter, M. ;

Rosenauer, A. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (08)

[50] ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC [J].

COOPER, CB ;

LUDOWISE, MJ ;

AEBI, V ;

MOON, RL .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :299-309

← 1 2 3 4 5 →