Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET

被引：39

作者：

Garg, Chirag ^{[1
]}

Chauhan, Nitanshu ^{[1
]}

Deng, Shan ^{[2
]}

Khan, Asif Islam ^{[3
]}

Dasgupta, Sudeb ^{[1
]}

Bulusu, Anand ^{[1
]}

Ni, Kai ^{[2
]}

机构：

[1] Indian Inst Technol Roorkee, Dept Elect & Commun Engn, Roorkee 247667, Uttar Pradesh, India

[2] Rochester Inst Technol, Dept Elect & Microelect Engn, Rochester, NY 14623 USA

[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 08期

关键词：

Iron; Fluctuations; FeFETs; Transistors; Logic gates; Grain size; Degradation; Crystalline phase; variation; FeFET; scaling; FIELD-EFFECT TRANSISTOR;

D O I：

10.1109/LED.2021.3087335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a comprehensive study of random spatial fluctuation of the ferroelectric (FE) phase and dielectric (DE) phase in FeFETs is conducted to understand its impact on device variation. It is found that: i) there exists a certain DE percentage threshold that below which the increase of the DE phase does not significantly impact the device memory window and variation and only above which evident device degradation can be observed; ii) increasing the DE phase increases the variation in the memory window and the coercive field distribution further exacerbates the variation, hence degrading the sensing margin; iii) decreasing the number of grains degrades the device variation, which calls for further grain size engineering for variation suppression.

引用

页码：1160 / 1163

页数：4

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