A W-Band Power Amplifier Utilizing a Miniaturized Marchand Balun Combiner

被引：38
|
作者：
Jia, Haikun [1 ]
Chi, Baoyong [1 ]
Kuang, Lixue [1 ]
Wang, Zhihua [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2015年 / 63卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Marchand balun; power amplifier (PA); power combiner; W-band; CMOS;
D O I：
10.1109/TMTT.2014.2387286
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A miniaturized Marchand balun combiner is proposed for a W-band power amplifier (PA). The proposed combiner reduces the electrical length of the transmission lines (transmission line) from about 80 degrees to 30 degrees, when compared with a conventional Marchand balun combiner. Implemented in a 1-V 65-nm CMOS process, the presented PA achieves a measured saturated output power of 11.9 dBm and a peak power-added efficiency of 9.0% at 87 GHz. The total chip area (with pads) is 0.77 x 0.48 mm(2), where the size of the balun combiner is only 0.36 x 0.13 mm(2).
引用
收藏
页码：719 / 725
页数：7
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